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Part Details for BSC010N04LSATMA1 by Infineon Technologies AG
Overview of BSC010N04LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC010N04LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y1792
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Newark | Mosfet, N-Ch, 40V, 100A, 150Deg C, 139W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC010N04LSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 64488 |
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$0.9730 / $2.0900 | Buy Now |
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DISTI #
50Y1792
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Avnet Americas | Power MOSFET, N Channel, 40 V, 281 A, 1 Milliohms, TDSON-FL, 8 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 50Y1792) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 1915 Partner Stock |
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$1.3500 / $2.0900 | Buy Now |
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DISTI #
BSC010N04LSATMA1
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Avnet Americas | Power MOSFET, N Channel, 40 V, 281 A, 1 Milliohms, TDSON-FL, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC010N04LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 497 |
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RFQ | ||
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Bristol Electronics | 249 |
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RFQ | ||
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DISTI #
C1S322000449970
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Chip1Stop | Trans MOSFET N-CH 40V 38A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape | 8959 |
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$0.8210 / $1.7400 | Buy Now |
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CHIPMALL.COM LIMITED | Infineon's 40V and 60V MOSFET product families feature not only the industrys lowest R DSon but also a perfect switching behavior for fast switching applications. 15% lower R DSon and 31% lower figure of merit R DSon x Q g compared to alternative devices has been realized by advanced thin wafer technology. | 5000 |
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$2.4968 | Buy Now |
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DISTI #
SP000928282
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EBV Elektronik | Power MOSFET, N Channel, 40 V, 281 A, 1 Milliohms, TDSON-FL, 8 Pins, Surface Mount (Alt: SP000928282) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 40V 100A TDSON-8 / Trans MOSFET N-CH 40V 38A 8-Pin TDSON EP T/R | 186597 |
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$0.4350 / $0.5620 | Buy Now |
Part Details for BSC010N04LSATMA1
BSC010N04LSATMA1 CAD Models
BSC010N04LSATMA1 Part Data Attributes
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BSC010N04LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC010N04LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.0013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC010N04LSATMA1
This table gives cross-reference parts and alternative options found for BSC010N04LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC010N04LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC010N04LS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC010N04LSATMA1 vs BSC010N04LS |
| BSC010N04LSI | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | BSC010N04LSATMA1 vs BSC010N04LSI |
| BSC010N04LSTATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC010N04LSATMA1 vs BSC010N04LSTATMA1 |
| BSC010N04LSIATMA1 | Infineon Technologies AG | $0.6118 | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | BSC010N04LSATMA1 vs BSC010N04LSIATMA1 |
| CSD18510Q5B | Texas Instruments | $1.2038 | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150 | BSC010N04LSATMA1 vs CSD18510Q5B |