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Power Field-Effect Transistor, 36A I(D), 60V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSON-8-3, 8 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC012N06NSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42AH1615
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Newark | Mosfet, N-Ch, 60V, 100A, 175Deg C, 214W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC012N06NSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 459 |
|
$0.6480 | Buy Now |
DISTI #
42AH1615
|
Avnet Americas | DIFFERENTIATED MOSFETS - Product that comes on tape, but is not reeled (Alt: 42AH1615) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 459 Partner Stock |
|
$2.0400 / $3.3800 | Buy Now |
DISTI #
BSC012N06NSATMA1
|
Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSC012N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$1.1344 / $1.1933 | Buy Now |
DISTI #
C1S322000739758
|
Chip One Stop | MOSFET RoHS: Compliant Container: Cut Tape | 4668 |
|
$1.2600 / $3.7400 | Buy Now |
DISTI #
SP001645312
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EBV Elektronik | DIFFERENTIATED MOSFETS (Alt: SP001645312) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
|
LCSC | 60V 100A 1.2m10V50A 3.3V 1 N-channel TSON-8 MOSFETs ROHS | 24 |
|
$2.5809 / $4.0840 | Buy Now |
|
Win Source Electronics | MOSFET N-CH 60V 100A TSON-8 | 25000 |
|
$4.1040 / $6.1560 | Buy Now |
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BSC012N06NSATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC012N06NSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 36A I(D), 60V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSON-8-3, 8 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TSON-8-3, 8 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 911 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.0012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 120 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 214 W | |
Pulsed Drain Current-Max (IDM) | 1224 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |