Datasheets
BSC012N06NSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 36A I(D), 60V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSON-8-3, 8 PIN

Part Details for BSC012N06NSATMA1 by Infineon Technologies AG

Results Overview of BSC012N06NSATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BSC012N06NSATMA1 Information

BSC012N06NSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC012N06NSATMA1

Part # Distributor Description Stock Price Buy
DISTI # 42AH1615
Newark Mosfet, N-Ch, 60V, 100A, 175Deg C, 214W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC012N06NSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 459
  • 1 $0.6480
  • 10 $0.6480
  • 25 $0.6480
  • 50 $0.6480
  • 100 $0.6480
  • 250 $0.6480
  • 500 $0.6480
  • 1,000 $0.6480
$0.6480 Buy Now
DISTI # 42AH1615
Avnet Americas DIFFERENTIATED MOSFETS - Product that comes on tape, but is not reeled (Alt: 42AH1615) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 459 Partner Stock
  • 1 $3.3800
  • 10 $2.8400
  • 25 $2.7400
  • 50 $2.3900
  • 100 $2.0400
$2.0400 / $3.3800 Buy Now
DISTI # BSC012N06NSATMA1
Avnet Americas DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSC012N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.1933
  • 10,000 $1.1795
  • 20,000 $1.1638
  • 30,000 $1.1500
  • 40,000 $1.1344
$1.1344 / $1.1933 Buy Now
DISTI # C1S322000739758
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 4668
  • 1 $3.7400
  • 10 $2.6000
  • 50 $2.4400
  • 100 $1.8400
  • 500 $1.4500
  • 1,000 $1.3000
  • 2,000 $1.2600
$1.2600 / $3.7400 Buy Now
DISTI # SP001645312
EBV Elektronik DIFFERENTIATED MOSFETS (Alt: SP001645312) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 100A 1.2m10V50A 3.3V 1 N-channel TSON-8 MOSFETs ROHS 24
  • 1 $4.0840
  • 10 $3.5043
  • 30 $3.1605
  • 100 $2.8121
  • 500 $2.6518
  • 1,000 $2.5809
$2.5809 / $4.0840 Buy Now
Win Source Electronics MOSFET N-CH 60V 100A TSON-8 25000
  • 9 $6.1560
  • 20 $5.0511
  • 31 $4.8933
  • 43 $4.7354
  • 55 $4.5776
  • 74 $4.1040
$4.1040 / $6.1560 Buy Now

Part Details for BSC012N06NSATMA1

BSC012N06NSATMA1 CAD Models

BSC012N06NSATMA1 Part Data Attributes

BSC012N06NSATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC012N06NSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 36A I(D), 60V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSON-8-3, 8 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TSON-8-3, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 911 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.0012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 120 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 1224 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Element Material SILICON

BSC012N06NSATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC012N06NSATMA1 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate trace as short as possible to minimize ringing and oscillations.

  • Yes, the BSC012N06NSATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).

  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

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