Datasheets
BSC014N03LSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 34A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC014N03LSGATMA1 by Infineon Technologies AG

Results Overview of BSC014N03LSGATMA1 by Infineon Technologies AG

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BSC014N03LSGATMA1 Information

BSC014N03LSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC014N03LSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # SP000394677
EBV Elektronik Trans MOSFET NCH 30V 34A 8Pin TDSON TR (Alt: SP000394677) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 30V 100A TDSON-8 28010
  • 30 $1.9500
  • 65 $1.6000
  • 100 $1.5500
  • 135 $1.5000
  • 175 $1.4500
  • 235 $1.3000
$1.3000 / $1.9500 Buy Now

Part Details for BSC014N03LSGATMA1

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BSC014N03LSGATMA1 Part Data Attributes

BSC014N03LSGATMA1 Infineon Technologies AG
Buy Now Datasheet
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BSC014N03LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 34A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

BSC014N03LSGATMA1 Related Parts

BSC014N03LSGATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for BSC014N03LSGATMA1 is -40°C to 150°C.

  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.

  • For optimal thermal performance, use a multi-layer PCB with a thermal via structure, and ensure good thermal conductivity between the device and the heat sink. Refer to the application note for specific layout recommendations.

  • Follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected environment. The device also has built-in ESD protection, but additional external protection may be necessary depending on the application.

  • The BSC014N03LSGATMA1 meets the quality and reliability standards of Infineon Technologies AG, including AEC-Q101 and ISO/TS 16949 certifications.

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