Part Details for BSC014NE2LSIATMA1 by Infineon Technologies AG
Overview of BSC014NE2LSIATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC014NE2LSIATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSC014NE2LSIATMA1CT-ND
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DigiKey | MOSFET N-CH 25V 33A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
17847 In Stock |
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$0.6178 / $1.6400 | Buy Now |
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DISTI #
BSC014NE2LSIATMA1
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Avnet Americas | Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.5755 / $0.6578 | Buy Now |
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DISTI #
726-BSC014NE2LSI
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Mouser Electronics | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 2973 |
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$0.6170 / $1.6400 | Buy Now |
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Future Electronics | Single N-Channel 25 V 2 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.6250 | Buy Now |
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Future Electronics | Single N-Channel 25 V 2 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.6250 / $0.8450 | Buy Now |
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Future Electronics | Single N-Channel 25 V 2 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.6250 / $0.8450 | Buy Now |
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Future Electronics | Single N-Channel 25 V 2 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.6250 | Buy Now |
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Bristol Electronics | 354 |
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RFQ | ||
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Rochester Electronics | BSC014NE2 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 50 |
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$0.6115 / $0.7194 | Buy Now |
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DISTI #
BSC014NE2LSIATMA1
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Avnet Americas | Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.5755 / $0.6578 | Buy Now |
Part Details for BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 CAD Models
BSC014NE2LSIATMA1 Part Data Attributes
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BSC014NE2LSIATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC014NE2LSIATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.002 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC014NE2LSIATMA1
This table gives cross-reference parts and alternative options found for BSC014NE2LSIATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC014NE2LSIATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC014NE2LSI | Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC014NE2LSIATMA1 vs BSC014NE2LSI |
| BSB013NE2LXI | Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, METAL, WDSON-3 | Infineon Technologies AG | BSC014NE2LSIATMA1 vs BSB013NE2LXI |
| AP1004CMX | TRANSISTOR 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, GREENFET PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | BSC014NE2LSIATMA1 vs AP1004CMX |
| BSB013NE2LXIXUMA1 | Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-3 | Infineon Technologies AG | BSC014NE2LSIATMA1 vs BSB013NE2LXIXUMA1 |
| FDMS2508SDC | N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM, 3000/TAPE REEL | Fairchild Semiconductor Corporation | BSC014NE2LSIATMA1 vs FDMS2508SDC |