Datasheets
BSC024NE2LSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 25A I(D), 25V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC024NE2LSATMA1 by Infineon Technologies AG

Overview of BSC024NE2LSATMA1 by Infineon Technologies AG

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Applications Healthcare Electronic Manufacturing

Price & Stock for BSC024NE2LSATMA1

Part # Distributor Description Stock Price Buy
DISTI # BSC024NE2LSATMA1CT-ND
DigiKey MOSFET N-CH 25V 25A/110A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9456
In Stock
  • 1 $1.1100
  • 10 $0.9110
  • 100 $0.7084
  • 500 $0.6005
  • 1,000 $0.4891
  • 2,000 $0.4605
  • 5,000 $0.4385
  • 10,000 $0.4183
$0.4183 / $1.1100 Buy Now
DISTI # BSC024NE2LSATMA1
Avnet Americas Trans MOSFET N-CH 25V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC024NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4453
  • 10,000 $0.4314
  • 20,000 $0.4174
  • 30,000 $0.4035
  • 40,000 $0.3896
$0.3896 / $0.4453 Buy Now
DISTI # 726-BSC024NE2LSATMA1
Mouser Electronics MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant 6012
  • 1 $0.8300
  • 10 $0.7070
  • 100 $0.5820
  • 500 $0.5140
  • 1,000 $0.4210
  • 2,500 $0.4180
  • 5,000 $0.4170
$0.4170 / $0.8300 Buy Now
Future Electronics Single N-Channel 25 V 2.4 mOhm 23 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.4250
  • 10,000 $0.4100
$0.4100 / $0.4250 Buy Now
Future Electronics Single N-Channel 25 V 2.4 mOhm 23 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.4250
  • 10,000 $0.4100
$0.4100 / $0.4250 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 25V, 0.0034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 77
  • 1 $0.9225
  • 6 $0.7688
  • 21 $0.5535
$0.5535 / $0.9225 Buy Now
DISTI # BSC024NE2LSATMA1
Avnet Americas Trans MOSFET N-CH 25V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC024NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4453
  • 10,000 $0.4314
  • 20,000 $0.4174
  • 30,000 $0.4035
  • 40,000 $0.3896
$0.3896 / $0.4453 Buy Now
Ameya Holding Limited   Min Qty: 5 4715
  • 5 $1.2242
  • 50 $1.1873
  • 500 $1.1281
  • 1,000 $1.0491
  • 2,500 $0.9548
$0.9548 / $1.2242 Buy Now
DISTI # BSC024NE2LSATMA1
Avnet Americas Trans MOSFET N-CH 25V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC024NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4453
  • 10,000 $0.4314
  • 20,000 $0.4174
  • 30,000 $0.4035
  • 40,000 $0.3896
$0.3896 / $0.4453 Buy Now
Chip 1 Exchange INSTOCK 5560
RFQ
DISTI # SP000756342
EBV Elektronik Power MOSFET, N Channel, 25 V, 100 A, 0.002 ohm, TDSON, Surface Mount (Alt: SP000756342) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC024NE2LSATMA1

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BSC024NE2LSATMA1 Part Data Attributes

BSC024NE2LSATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC024NE2LSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 25A I(D), 25V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.0034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC024NE2LSATMA1

This table gives cross-reference parts and alternative options found for BSC024NE2LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC024NE2LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC024NE2LS Power Field-Effect Transistor, 25A I(D), 25V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC024NE2LSATMA1 vs BSC024NE2LS
Part Number Description Manufacturer Compare
BSC024NE2LS Power Field-Effect Transistor, 25A I(D), 25V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC024NE2LSATMA1 vs BSC024NE2LS

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