Part Details for BSC027N10NS5 by Infineon Technologies AG
Overview of BSC027N10NS5 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC027N10NS5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
79005745
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Verical | Trans MOSFET N-CH 100V 23A 8-Pin TSON EP T/R Min Qty: 15 Package Multiple: 1 Date Code: 2301 | Americas - 5000 |
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$4.2085 / $5.3654 | Buy Now |
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Quest Components | 4000 |
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$4.4010 / $8.8020 | Buy Now | |
|
DISTI #
TMOS2687
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Rutronik | N-CH 100V 100A 2,1mOhm TSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel |
Stock DE - 5000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$2.0800 | Buy Now |
|
DISTI #
SMC-BSC027N10NS5
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 4037 |
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RFQ | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 5000 |
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$2.9340 / $8.1320 | Buy Now |
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LCSC | TDSON-8-EP(5x6) MOSFETs ROHS | 37 |
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$9.9491 / $11.9574 | Buy Now |
Part Details for BSC027N10NS5
BSC027N10NS5 CAD Models
BSC027N10NS5 Part Data Attributes:
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BSC027N10NS5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC027N10NS5
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 641 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 194 A | |
| Drain-source On Resistance-Max | 0.0027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 75 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 3 W | |
| Power Dissipation-Max (Abs) | 214 W | |
| Pulsed Drain Current-Max (IDM) | 776 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |