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Transistors / Power Field-Effect Transistors / BSC028N06NS
Datasheets
BSC028N06NS by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Part Details for BSC028N06NS by Infineon Technologies AG

Results Overview of BSC028N06NS by Infineon Technologies AG

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BSC028N06NS Information

BSC028N06NS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC028N06NS

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 178
  • 3 $2.4000
  • 10 $1.8000
  • 29 $1.5000
  • 101 $0.9000
$0.9000 / $2.4000 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 30
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
LCSC 60V 100A 2.8m10V50A 83W 3.3V 1 N-channel TDSON-8-EP(5x6) MOSFETs ROHS 2450
  • 1 $0.9215
  • 10 $0.7375
  • 30 $0.6463
  • 100 $0.5551
  • 500 $0.5010
  • 1,000 $0.4716
$0.4716 / $0.9215 Buy Now
Win Source Electronics Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R / New OptiMOS™ 40V and 60V 76865
  • 105 $0.4843
  • 225 $0.4531
  • 345 $0.4375
  • 495 $0.4062
  • 645 $0.3906
  • 800 $0.3750
$0.3750 / $0.4843 Buy Now

Part Details for BSC028N06NS

BSC028N06NS CAD Models

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BSC028N06NS Part Data Attributes

Parametric Data
BSC028N06NS Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC028N06NS Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC028N06NS

This table gives cross-reference parts and alternative options found for BSC028N06NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSB028N06NN3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN BSC028N06NS vs BSB028N06NN3G
IPB026N06NATMA1 Infineon Technologies AG $1.3522 Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN BSC028N06NS vs IPB026N06NATMA1
BSC027N06LS5ATMA1 Infineon Technologies AG $1.4147 Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 BSC028N06NS vs BSC027N06LS5ATMA1
BSC028N06LS3GATMA1 Infineon Technologies AG $1.1522 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC028N06NS vs BSC028N06LS3GATMA1
SP000453652 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 BSC028N06NS vs SP000453652
BSC028N06NSATMA1 Infineon Technologies AG $1.1843 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 BSC028N06NS vs BSC028N06NSATMA1

BSC028N06NS Related Parts

BSC028N06NS Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the BSC028N06NS is 175°C, as specified in the datasheet.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.

  • The maximum current rating of the BSC028N06NS is 28A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.

  • To protect the BSC028N06NS from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

  • The recommended gate drive voltage for the BSC028N06NS is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.

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