Datasheets
BSC028N06NSTATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Part Details for BSC028N06NSTATMA1 by Infineon Technologies AG

Results Overview of BSC028N06NSTATMA1 by Infineon Technologies AG

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BSC028N06NSTATMA1 Information

BSC028N06NSTATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC028N06NSTATMA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC6985
Newark Mosfet, N-Ch, 60V, 100A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC028N06NSTATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 8651
  • 1 $0.8590
  • 10 $0.8590
  • 25 $0.8590
  • 50 $0.8590
  • 100 $0.8590
$0.8590 Buy Now
DISTI # 86AK4434
Newark Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC028N06NSTATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.3200
$1.3200 Buy Now
DISTI # 93AC6985
Avnet Americas Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 93AC6985) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 8651 Partner Stock
  • 1 $2.8500
  • 10 $2.3300
  • 25 $2.2100
  • 50 $2.1000
  • 100 $1.9800
$1.9800 / $2.8500 Buy Now
DISTI # BSC028N06NSTATMA1
Avnet Americas Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06NSTATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.0602
  • 10,000 $1.0515
  • 20,000 $1.0428
  • 30,000 $1.0341
  • 40,000 $1.0254
$1.0254 / $1.0602 Buy Now
Rochester Electronics BSC028N06 - N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 12786
  • 1 $1.2100
  • 25 $1.1900
  • 100 $1.1400
  • 500 $1.0900
  • 1,000 $1.0300
$1.0300 / $1.2100 Buy Now
NexGen Digital   2295
RFQ
DISTI # SP001666498
EBV Elektronik Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP001666498) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 20000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 15000
  • 5,000 $1.5500
  • 15,000 $1.4400
$1.4400 / $1.5500 Buy Now

Part Details for BSC028N06NSTATMA1

BSC028N06NSTATMA1 CAD Models

BSC028N06NSTATMA1 Part Data Attributes

BSC028N06NSTATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC028N06NSTATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC028N06NSTATMA1

This table gives cross-reference parts and alternative options found for BSC028N06NSTATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N06NSTATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC027N06LS5ATMA1 Infineon Technologies AG $1.2723 Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 BSC028N06NSTATMA1 vs BSC027N06LS5ATMA1

BSC028N06NSTATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC028N06NSTATMA1 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • A good PCB layout for the BSC028N06NSTATMA1 should minimize the lead length and use a solid ground plane to reduce parasitic inductance and improve thermal performance.

  • Yes, the BSC028N06NSTATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.

  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

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