Part Details for BSC032N04LSATMA1 by Infineon Technologies AG
Overview of BSC032N04LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BSC032N04LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC8330
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Newark | Mosfet, N-Ch, 40V, 98A, Tdson, Transistor Polarity:N Channel, Continuous Drain Current Id:98A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0025Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Infineon BSC032N04LSATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9472 |
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$0.4780 / $1.1500 | Buy Now |
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DISTI #
86AK4438
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Newark | Mosfet, N-Ch, 40V, 98A, Tdson Rohs Compliant: Yes |Infineon BSC032N04LSATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4340 | Buy Now |
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DISTI #
BSC032N04LSATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 98A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC032N04LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 20000 |
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$0.3378 / $0.3489 | Buy Now |
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Rochester Electronics | BSC032N04 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Active Min Qty: 1 | 5 |
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$0.3938 / $0.4633 | Buy Now |
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DISTI #
BSC032N04LSATMA1
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TME | Transistor: N-MOSFET, unipolar, 40V, 83A, 52W, PG-TDSON-8 Min Qty: 1 | 1459 |
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$0.7100 / $1.0500 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 3391 |
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RFQ | |
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DISTI #
C1S322000454404
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 18440 |
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$0.3590 / $0.5950 | Buy Now |
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DISTI #
SP001067018
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EBV Elektronik | Trans MOSFET N-CH 40V 98A 8-Pin TDSON T/R (Alt: SP001067018) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 40V 98A 3.2m10V50A 52W 2V250uA 1 N-channel TDSON-8 MOSFETs ROHS | 5 |
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$0.6596 / $0.8781 | Buy Now |
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Win Source Electronics | 233800 |
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$0.4645 / $0.6967 | Buy Now |
Part Details for BSC032N04LSATMA1
BSC032N04LSATMA1 CAD Models
BSC032N04LSATMA1 Part Data Attributes
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BSC032N04LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC032N04LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 392 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |