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Part Details for BSC034N06NSATMA1 by Infineon Technologies AG
Overview of BSC034N06NSATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC034N06NSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1376
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Newark | Mosfet, N-Ch, 60V, 100A, Tdson, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0028Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Infineon BSC034N06NSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 11444 |
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$0.8000 / $1.3900 | Buy Now |
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DISTI #
BSC034N06NSATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC034N06NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 5000 |
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$0.6312 | Buy Now |
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Bristol Electronics | 187 |
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RFQ | ||
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Rochester Electronics | BSC032N04 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$0.7154 / $0.8417 | Buy Now |
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DISTI #
C1S322000636938
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 20313 |
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$0.5870 / $1.4300 | Buy Now |
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DISTI #
SP001067010
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EBV Elektronik | Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP001067010) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for BSC034N06NSATMA1
BSC034N06NSATMA1 CAD Models
BSC034N06NSATMA1 Part Data Attributes
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BSC034N06NSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC034N06NSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 71 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.0034 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC034N06NSATMA1
This table gives cross-reference parts and alternative options found for BSC034N06NSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC034N06NSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC031N06NS3GATMA1 | Infineon Technologies AG | $1.2378 | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC034N06NSATMA1 vs BSC031N06NS3GATMA1 |