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Part Details for BSC035N10NS5ATMA1 by Infineon Technologies AG
Overview of BSC035N10NS5ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC035N10NS5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC8331
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Newark | Mosfet, N-Ch, 100V, 100A, 150Deg C, 156W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC035N10NS5ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5194 |
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$1.3700 / $1.7500 | Buy Now |
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DISTI #
86AK4440
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Newark | Mosfet, N-Ch, 100V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC035N10NS5ATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3300 | Buy Now |
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DISTI #
BSC035N10NS5ATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC035N10NS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 215000 |
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$0.8056 | Buy Now |
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DISTI #
13AC8331
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Avnet Americas | Trans MOSFET N-CH 100V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 13AC8331) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 5194 Partner Stock |
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$1.8000 / $2.9600 | Buy Now |
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Bristol Electronics | 13906 |
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RFQ | ||
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Rochester Electronics | BSC035 - 100V OptiMOS Power Transistor RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$1.2100 / $1.4200 | Buy Now |
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DISTI #
BSC035N10NS5ATMA1
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 156W, PG-TDSON-8 Min Qty: 1 | 0 |
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$1.9500 / $2.8300 | RFQ |
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DISTI #
C1S322000840230
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 22872 |
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$1.1300 / $2.4900 | Buy Now |
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DISTI #
SP001229628
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EBV Elektronik | Trans MOSFET N-CH 100V 100A 8-Pin TDSON T/R (Alt: SP001229628) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 100V 100A TDSON-8 | 25001 |
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$1.0286 / $1.3285 | Buy Now |
Part Details for BSC035N10NS5ATMA1
BSC035N10NS5ATMA1 CAD Models
BSC035N10NS5ATMA1 Part Data Attributes
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BSC035N10NS5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC035N10NS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC035N10NS5ATMA1
This table gives cross-reference parts and alternative options found for BSC035N10NS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC035N10NS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC035N10NS5 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TDSON-8 | BSC035N10NS5ATMA1 vs BSC035N10NS5 |
| NDBA180N10BT4H | onsemi | Check for Price | Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel, 800-REEL | BSC035N10NS5ATMA1 vs NDBA180N10BT4H |
| IPP030N10N3GHKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | BSC035N10NS5ATMA1 vs IPP030N10N3GHKSA1 |
| IPP030N10N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | BSC035N10NS5ATMA1 vs IPP030N10N3G |