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Part Details for BSC039N06NS by Infineon Technologies AG
Overview of BSC039N06NS by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BSC039N06NS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-BSC039N06NS
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Mouser Electronics | MOSFET N-Ch 60V 100A TDSON-8 RoHS: Compliant | 9652 |
|
$0.7340 / $1.7400 | Buy Now |
|
DISTI #
73928886
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RS | Transistor, MOSFET, N-channel, 60V, 100A, 3.9 mOhm, 102A, 32 nC, TDSON8 | Infineon BSC039N06NS RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
|
$0.9200 | RFQ |
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DISTI #
BSC039N06NS
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TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 69W, PG-TDSON-8 Min Qty: 1 | 0 |
|
$1.1500 / $1.7200 | RFQ |
|
|
Win Source Electronics | New OptiMOS™ 40V and 60V | 161000 |
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$0.6980 / $1.0460 | Buy Now |
Part Details for BSC039N06NS
BSC039N06NS CAD Models
BSC039N06NS Part Data Attributes
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BSC039N06NS
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC039N06NS
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0039 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 44 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC039N06NS
This table gives cross-reference parts and alternative options found for BSC039N06NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC039N06NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC039N06NSATMA1 | Power Field-Effect Transistor, 19A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC039N06NS vs BSC039N06NSATMA1 |