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Part Details for BSC040N08NS5ATMA1 by Infineon Technologies AG
Overview of BSC040N08NS5ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC040N08NS5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
12AC9443
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Newark | Mosfet, N-Ch, 80V, 100A, Tdson, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0034Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Infineon BSC040N08NS5ATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10438 |
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$1.0000 / $2.1200 | Buy Now |
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DISTI #
86AK4444
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Newark | Mosfet, N-Ch, 80V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC040N08NS5ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8870 / $0.9030 | Buy Now |
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DISTI #
BSC040N08NS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16952 In Stock |
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$0.8539 / $2.0400 | Buy Now |
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DISTI #
BSC040N08NS5ATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC040N08NS5ATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.7969 / $0.9107 | Buy Now |
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DISTI #
726-BSC040N08NS5ATMA
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Mouser Electronics | MOSFET N-Ch 80V 100A TDSON-8 RoHS: Compliant | 0 |
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$0.8830 / $2.0300 | Order Now |
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DISTI #
V36:1790_06383117
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Arrow Electronics | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2351 | Americas - 10000 |
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$0.8499 / $0.8719 | Buy Now |
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Future Electronics | Single N-Channel 80 V 4 mOhm 54 nC OptiMOS™ Power Mosfet - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$0.8600 | Buy Now |
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Future Electronics | Single N-Channel 80 V 4 mOhm 54 nC OptiMOS™ Power Mosfet - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.8650 | Buy Now |
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DISTI #
69264315
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Verical | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Min Qty: 21 Package Multiple: 1 Date Code: 2250 | Americas - 11148 |
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$0.9213 / $1.5500 | Buy Now |
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DISTI #
77833482
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Verical | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2351 | Americas - 10000 |
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$0.8499 / $0.8719 | Buy Now |
Part Details for BSC040N08NS5ATMA1
BSC040N08NS5ATMA1 CAD Models
BSC040N08NS5ATMA1 Part Data Attributes
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BSC040N08NS5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC040N08NS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC040N08NS5ATMA1
This table gives cross-reference parts and alternative options found for BSC040N08NS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC040N08NS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC036NE7NS3GATMA1 | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC040N08NS5ATMA1 vs BSC036NE7NS3GATMA1 |
| BSC042NE7NS3GATMA1 | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC040N08NS5ATMA1 vs BSC042NE7NS3GATMA1 |
| BSC036NE7NS3GXT | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC040N08NS5ATMA1 vs BSC036NE7NS3GXT |