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Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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BSC040N10NS5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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LCSC | 100V 86A 4m10V50A 139W 3.8V TDSON-8-EP(5.1x5.9) MOSFETs ROHS | 4086 |
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Win Source Electronics | Superior thermal resistance | 80000 |
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BSC040N10NS5
Infineon Technologies AG
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Datasheet
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BSC040N10NS5
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC040N10NS5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC040N10NS5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSC040N10NS5ATMA1 | Infineon Technologies AG | $1.1135 | Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | BSC040N10NS5 vs BSC040N10NS5ATMA1 |
The maximum operating temperature range for the BSC040N10NS5 is -40°C to 150°C.
The recommended gate resistor value for the BSC040N10NS5 is between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
Yes, the BSC040N10NS5 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
The maximum allowed voltage for the BSC040N10NS5 is 40V, with a maximum repetitive peak voltage of 50V.
To ensure proper cooling, the BSC040N10NS5 should be mounted on a heat sink with a thermal resistance of less than 10°C/W, and the ambient temperature should be kept below 50°C.