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Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AC9444
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Newark | Mosfet, N-Ch, 100V, 100A, 150Deg C, 139W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC040N10NS5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4105 |
|
$1.4600 / $1.7300 | Buy Now |
DISTI #
86AK4445
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Newark | Mosfet, N-Ch, 100V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC040N10NS5ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3800 | Buy Now |
DISTI #
BSC040N10NS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
36955 In Stock |
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$1.3282 / $2.8400 | Buy Now |
DISTI #
726-BSC040N10NS5ATMA
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Mouser Electronics | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 16068 |
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$1.2900 / $2.6300 | Buy Now |
DISTI #
73928879
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RS | Transistor, MOSFET, N-channel, 100V, 100A, 4.0 mOhm, 75 nC, TSON8 | Infineon BSC040N10NS5ATMA1 RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$1.5300 | RFQ |
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Future Electronics | Single N-Channel 100 V 4 mOhm 58 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 40000Reel |
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$1.2700 | Buy Now |
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Future Electronics | Single N-Channel 100 V 4 mOhm 58 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$1.2700 | Buy Now |
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Rochester Electronics | BSC040N10NS5 - OptiMOS 5 Power-Transistor, 100 V RoHS: Compliant Status: Active Min Qty: 1 | 289619 |
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$1.3200 / $1.5500 | Buy Now |
DISTI #
BSC040N10NS5ATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC040N10NS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 135000 |
|
$1.1511 / $1.4168 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 11490 |
|
$2.7827 / $2.9572 | Buy Now |
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BSC040N10NS5ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC040N10NS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC040N10NS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC040N10NS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC040N10NS5 | Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Infineon Technologies AG | BSC040N10NS5ATMA1 vs BSC040N10NS5 |
BSC040N10NS5SC | Power Field-Effect Transistor, | Infineon Technologies AG | BSC040N10NS5ATMA1 vs BSC040N10NS5SC |