Part Details for BSC042N03MSGATMA1 by Infineon Technologies AG
Overview of BSC042N03MSGATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC042N03MSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2490
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Newark | Mosfet, N Ch, 30V, 93A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:93A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSC042N03MSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.3860 / $0.9360 | Buy Now |
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DISTI #
BSC042N03MSGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 17A/93A TDSON Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4804 In Stock |
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$0.3371 / $0.9000 | Buy Now |
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DISTI #
BSC042N03MSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC042N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.3147 / $0.3597 | Buy Now |
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Future Electronics | Single N-Channel 30 V 5.4 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.3300 / $0.3450 | Buy Now |
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Future Electronics | Single N-Channel 30 V 5.4 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.3300 / $0.3450 | Buy Now |
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DISTI #
BSC042N03MSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC042N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.3147 / $0.3597 | Buy Now |
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DISTI #
BSC042N03MSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 82A, 57W, PG-TDSON-8 Min Qty: 1 | 0 |
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$0.3480 / $0.7520 | RFQ |
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DISTI #
BSC042N03MSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC042N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.3147 / $0.3597 | Buy Now |
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DISTI #
SP000311512
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EBV Elektronik | Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R (Alt: SP000311512) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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DISTI #
1775441
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Farnell | MOSFET, N CH, 93A, 30V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 29 Weeks, 1 Days Container: Each | 0 |
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$0.3652 / $1.0401 | Buy Now |
Part Details for BSC042N03MSGATMA1
BSC042N03MSGATMA1 CAD Models
BSC042N03MSGATMA1 Part Data Attributes
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BSC042N03MSGATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC042N03MSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 372 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC042N03MSGATMA1
This table gives cross-reference parts and alternative options found for BSC042N03MSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC042N03MSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC042N03MSG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC042N03MSGATMA1 vs BSC042N03MSG |