Part Details for BSC042N03MSGXT by Infineon Technologies AG
Overview of BSC042N03MSGXT by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC042N03MSGXT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSC042N03MSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC042N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.3147 / $0.3597 | Buy Now |
|
DISTI #
BSC042N03MSGATMA1
|
Avnet Americas | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC042N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
|
$0.3147 / $0.3597 | Buy Now |
|
DISTI #
BSC042N03MSGATMA1
|
Avnet Americas | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC042N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
|
$0.3147 / $0.3597 | Buy Now |
Part Details for BSC042N03MSGXT
BSC042N03MSGXT CAD Models
BSC042N03MSGXT Part Data Attributes
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BSC042N03MSGXT
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC042N03MSGXT
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 372 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC042N03MSGXT
This table gives cross-reference parts and alternative options found for BSC042N03MSGXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC042N03MSGXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | BSC042N03MSGXT vs NTMFS4985NFT3G |
| FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | BSC042N03MSGXT vs FDS7068SN3 |
| RQ3E180AJTB | Power Field-Effect Transistor, 18A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HSMT8, 8 PIN | ROHM Semiconductor | BSC042N03MSGXT vs RQ3E180AJTB |
| BSC043N03MSCGATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC042N03MSGXT vs BSC043N03MSCGATMA1 |
| QM3006D | Power Field-Effect Transistor, 17A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | UPI Semiconductor Corp | BSC042N03MSGXT vs QM3006D |
| BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSC042N03MSGXT vs BSZ0904NSI |
| BSZ0589NSATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8 | Infineon Technologies AG | BSC042N03MSGXT vs BSZ0589NSATMA1 |
| NTTFS4985NFTWG | 16.3A, 30V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8 | onsemi | BSC042N03MSGXT vs NTTFS4985NFTWG |
| FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | BSC042N03MSGXT vs FDMS8672S |
| NTTFS4985NFTAG | Single N-Channel Power MOSFET 30V, 64A, 3.5mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | BSC042N03MSGXT vs NTTFS4985NFTAG |