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Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79X1331
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Newark | Mosfet, N-Ch, 75V, 100A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.1V Rohs Compliant: Yes |Infineon BSC042NE7NS3GATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1225 |
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$1.3000 / $2.9000 | Buy Now |
DISTI #
86AK4446
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Newark | Mosfet, N-Ch, 75V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC042NE7NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.2500 | Buy Now |
DISTI #
BSC042NE7NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 75V 100A TDSON-8 T/R - Tape and Reel (Alt: BSC042NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 3880 |
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RFQ | ||
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Bristol Electronics | 1039 |
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RFQ | ||
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Rochester Electronics | BSC042NE7NS3 G - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$1.1300 / $1.3300 | Buy Now |
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Ameya Holding Limited | Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8 | 5000 |
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RFQ | |
DISTI #
C1S322000296077
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Chip1Stop | Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape | 4230 |
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$1.0500 / $1.0600 | Buy Now |
DISTI #
SP000657440
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EBV Elektronik | Trans MOSFET N-CH 75V 100A TDSON-8 T/R (Alt: SP000657440) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 75V 132A 2.5W 4.2m10V50A 3.8V91uA 1 N-channel TDSON-8 MOSFETs ROHS | 27 |
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$1.8260 / $2.8149 | Buy Now |
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BSC042NE7NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC042NE7NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 220 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 40 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC042NE7NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC042NE7NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSC036NE7NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | BSC042NE7NS3GATMA1 vs BSC036NE7NS3G |
BSC040N08NS5 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 19A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | BSC042NE7NS3GATMA1 vs BSC040N08NS5 |
BSC036NE7NS3GATMA1 | Infineon Technologies AG | $1.4858 | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | BSC042NE7NS3GATMA1 vs BSC036NE7NS3GATMA1 |
BSC042NE7NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC042NE7NS3GATMA1 vs BSC042NE7NS3G |
BSB044N08NN3GXUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 80V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | BSC042NE7NS3GATMA1 vs BSB044N08NN3GXUMA1 |