Datasheets
BSC042NE7NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC042NE7NS3GATMA1 by Infineon Technologies AG

Overview of BSC042NE7NS3GATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BSC042NE7NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1331
Newark Mosfet, N-Ch, 75V, 100A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.1V Rohs Compliant: Yes |Infineon BSC042NE7NS3GATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1225
  • 1 $2.9000
  • 10 $2.1800
  • 25 $2.0100
  • 50 $1.8300
  • 100 $1.6500
  • 250 $1.5300
  • 500 $1.3900
  • 1,000 $1.3000
$1.3000 / $2.9000 Buy Now
DISTI # 86AK4446
Newark Mosfet, N-Ch, 75V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC042NE7NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.2500
$1.2500 Buy Now
DISTI # BSC042NE7NS3GATMA1
Avnet Americas Trans MOSFET N-CH 75V 100A TDSON-8 T/R - Tape and Reel (Alt: BSC042NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 0
RFQ
Bristol Electronics   3880
RFQ
Bristol Electronics   1039
RFQ
Rochester Electronics BSC042NE7NS3 G - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 Call for Availability
  • 1 $1.3300
  • 25 $1.3000
  • 100 $1.2500
  • 500 $1.2000
  • 1,000 $1.1300
$1.1300 / $1.3300 Buy Now
Ameya Holding Limited Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8 5000
RFQ
DISTI # C1S322000296077
Chip1Stop Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 4230
  • 1 $1.0600
  • 100 $1.0500
$1.0500 / $1.0600 Buy Now
DISTI # SP000657440
EBV Elektronik Trans MOSFET N-CH 75V 100A TDSON-8 T/R (Alt: SP000657440) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 75V 132A 2.5W 4.2m10V50A 3.8V91uA 1 N-channel TDSON-8 MOSFETs ROHS 27
  • 1 $2.8149
  • 10 $2.4342
  • 30 $2.2083
  • 100 $1.9792
  • 500 $1.8740
  • 1,000 $1.8260
$1.8260 / $2.8149 Buy Now
Win Source Electronics MOSFET N-CH 75V 100A TDSON-8 40000
  • 20 $2.5495
  • 42 $2.3851
  • 66 $2.3028
  • 94 $2.1383
  • 122 $2.0561
  • 152 $1.9739
$1.9739 / $2.5495 Buy Now

Part Details for BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 CAD Models

BSC042NE7NS3GATMA1 Part Data Attributes

BSC042NE7NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC042NE7NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 220 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC042NE7NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC042NE7NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC042NE7NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC036NE7NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 BSC042NE7NS3GATMA1 vs BSC036NE7NS3G
BSC040N08NS5 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 19A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 BSC042NE7NS3GATMA1 vs BSC040N08NS5
BSC036NE7NS3GATMA1 Infineon Technologies AG $1.4858 Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 BSC042NE7NS3GATMA1 vs BSC036NE7NS3GATMA1
BSC042NE7NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC042NE7NS3GATMA1 vs BSC042NE7NS3G
BSB044N08NN3GXUMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 18A I(D), 80V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN BSC042NE7NS3GATMA1 vs BSB044N08NN3GXUMA1

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