Part Details for BSC047N08NS3GATMA1 by Infineon Technologies AG
Overview of BSC047N08NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Renewable Energy
Price & Stock for BSC047N08NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
BSC047N08NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 18A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10136 In Stock |
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$1.3946 / $2.9900 | Buy Now |
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DISTI #
BSC047N08NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 10000 |
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$1.3017 / $1.4877 | Buy Now |
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DISTI #
60R2492
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Avnet Americas | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Bulk (Alt: 60R2492) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk | 1912 Partner Stock |
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$1.6000 / $3.1100 | Buy Now |
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DISTI #
726-BSC047N08NS3GATM
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Mouser Electronics | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 2064 |
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$1.3900 / $2.9900 | Buy Now |
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Future Electronics | Single N-Channel 80 V 4.7 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 10000Reel |
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$1.3700 | Buy Now |
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Future Electronics | Single N-Channel 80 V 4.7 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$1.3700 | Buy Now |
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DISTI #
BSC047N08NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 10000 |
|
$1.3017 / $1.4877 | Buy Now |
|
DISTI #
BSC047N08NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.2087 / $1.4877 | Buy Now |
|
DISTI #
60R2492
|
Avnet Americas | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Bulk (Alt: 60R2492) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk | 1912 Partner Stock |
|
$1.6000 / $3.1100 | Buy Now |
|
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Ameya Holding Limited | Single N-Channel 80 V 4.7 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8 | 1778 |
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RFQ |
Part Details for BSC047N08NS3GATMA1
BSC047N08NS3GATMA1 CAD Models
BSC047N08NS3GATMA1 Part Data Attributes
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BSC047N08NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC047N08NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.0047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC047N08NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC047N08NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC047N08NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CSD19502Q5BT | 80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC047N08NS3GATMA1 vs CSD19502Q5BT |
| NVMFS6H824NT1G | Power MOSFET 80V, 107A, 4.5 mΩ, Single N-Channel, 1500-REEL, Automotive Qualified | onsemi | BSC047N08NS3GATMA1 vs NVMFS6H824NT1G |
| CSD19502Q5B | 80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC047N08NS3GATMA1 vs CSD19502Q5B |
| NVMFS6H824NWFT1G | Power MOSFET 80V, 107A, 4.5 mΩ, Single N-Channel, 1500-REEL, Automotive Qualified | onsemi | BSC047N08NS3GATMA1 vs NVMFS6H824NWFT1G |