Datasheets
BSC050N04LSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 18A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8

Part Details for BSC050N04LSGATMA1 by Infineon Technologies AG

Overview of BSC050N04LSGATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BSC050N04LSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 1775447
Farnell MOSFET, N CH, 85A, 40V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each 18919
  • 1 $0.8802
  • 10 $0.6165
  • 100 $0.4280
  • 500 $0.3579
  • 1,000 $0.3133
  • 5,000 $0.3070
$0.3070 / $0.8802 Buy Now
DISTI # BSC050N04LSGATMA1
Avnet Americas Trans MOSFET N-CH 40V 85A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC050N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 0
RFQ
Bristol Electronics   20000
RFQ
Rochester Electronics BSC050N04LS G - TRENCH <= 40V RoHS: Compliant Status: Active Min Qty: 1 2185
  • 1 $0.3250
  • 25 $0.3185
  • 100 $0.3055
  • 500 $0.2925
  • 1,000 $0.2763
$0.2763 / $0.3250 Buy Now
DISTI # BSC050N04LSGATMA1
TME Transistor: N-MOSFET, unipolar, 40V, 71A, 57W, PG-TDSON-8 Min Qty: 1 0
  • 1 $0.6960
  • 5 $0.4980
  • 25 $0.4530
  • 100 $0.4190
  • 250 $0.4000
  • 500 $0.3590
  • 1,000 $0.3350
  • 5,000 $0.3110
$0.3110 / $0.6960 RFQ
DISTI # SP000354806
EBV Elektronik Trans MOSFET N-CH 40V 85A 8-Pin TDSON T/R (Alt: SP000354806) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 10000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $0.4177
  • 10,000 $0.3866
$0.3866 / $0.4177 Buy Now
Win Source Electronics MOSFET N-CH 40V 85A TDSON-8 45100
  • 110 $0.4648
  • 265 $0.3814
  • 410 $0.3695
  • 560 $0.3576
  • 725 $0.3457
  • 970 $0.3099
$0.3099 / $0.4648 Buy Now

Part Details for BSC050N04LSGATMA1

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BSC050N04LSGATMA1 Part Data Attributes

BSC050N04LSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC050N04LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SON
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 35 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.0072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 340 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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