Datasheets
BSC057N08NS3G by: Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC057N08NS3G by Infineon Technologies AG

Overview of BSC057N08NS3G by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BSC057N08NS3G

Part # Distributor Description Stock Price Buy
ComSIT USA MOSFET OPTIMOS 3 POWER-TRANISTOR, 80 V Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 2495
RFQ
Chip 1 Exchange INSTOCK 35070
RFQ
CHIPMALL.COM LIMITED 80V 16A 2.5W 5.7m@10V,50A 3.5V@73uA N Channel TDSON-8-EP5x6 MOSFETs ROHS 9608
  • 1 $1.1902
  • 10 $1.0126
  • 30 $0.9152
  • 100 $0.8050
  • 500 $0.6603
  • 1,000 $0.6374
$0.6374 / $1.1902 Buy Now
CHIPMALL.COM LIMITED   381
  • 1 $0.9488
$0.9488 Buy Now
Win Source Electronics OptiMOS3 Power-Transistor 166534
  • 45 $1.2440
  • 100 $1.0210
  • 155 $0.9890
  • 210 $0.9570
  • 275 $0.9250
  • 365 $0.8290
$0.8290 / $1.2440 Buy Now

Part Details for BSC057N08NS3G

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BSC057N08NS3G Part Data Attributes

BSC057N08NS3G Infineon Technologies AG
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BSC057N08NS3G Infineon Technologies AG Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 216 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.0057 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 114 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC057N08NS3G

This table gives cross-reference parts and alternative options found for BSC057N08NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC057N08NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC057N08NS3GATMA1 Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC057N08NS3G vs BSC057N08NS3GATMA1

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