Part Details for BSC057N08NS3G by Infineon Technologies AG
Overview of BSC057N08NS3G by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BSC057N08NS3G
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | MOSFET OPTIMOS 3 POWER-TRANISTOR, 80 V Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2495 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 35070 |
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RFQ | |
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CHIPMALL.COM LIMITED | 80V 16A 2.5W 5.7m@10V,50A 3.5V@73uA N Channel TDSON-8-EP5x6 MOSFETs ROHS | 9608 |
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$0.6374 / $1.1902 | Buy Now |
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CHIPMALL.COM LIMITED | 381 |
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$0.9488 | Buy Now | |
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Win Source Electronics | OptiMOS3 Power-Transistor | 166534 |
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$0.8290 / $1.2440 | Buy Now |
Part Details for BSC057N08NS3G
BSC057N08NS3G CAD Models
BSC057N08NS3G Part Data Attributes
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BSC057N08NS3G
Infineon Technologies AG
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Datasheet
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BSC057N08NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 216 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.0057 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 114 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC057N08NS3G
This table gives cross-reference parts and alternative options found for BSC057N08NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC057N08NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC057N08NS3GATMA1 | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC057N08NS3G vs BSC057N08NS3GATMA1 |