Datasheets
BSC076N06NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC076N06NS3GATMA1 by Infineon Technologies AG

Overview of BSC076N06NS3GATMA1 by Infineon Technologies AG

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Price & Stock for BSC076N06NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47Y7996
Newark Mosfet Transistor, N Channel, 50 A, 60 V, 0.0062 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon BSC076N06NS3GATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 49089
  • 1 $1.4500
  • 10 $1.1300
  • 25 $1.0500
  • 50 $0.9620
  • 100 $0.8760
  • 250 $0.7860
  • 500 $0.6960
  • 1,000 $0.5890
$0.5890 / $1.4500 Buy Now
DISTI # 86AK4460
Newark Mosfet, N-Ch, 60V, 50A, Tdson Rohs Compliant: Yes |Infineon BSC076N06NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.4680
$0.4680 Buy Now
DISTI # BSC076N06NS3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel 30000
RFQ
Bristol Electronics   317
RFQ
DISTI # C1S322000840300
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 4689
  • 1 $1.0900
  • 10 $0.8620
  • 50 $0.8000
  • 100 $0.6040
  • 200 $0.5700
  • 500 $0.4890
  • 1,000 $0.4540
  • 2,000 $0.4330
$0.4330 / $1.0900 Buy Now
DISTI # SP000453656
EBV Elektronik Power MOSFET, N Channel, 60 V, 50 A, 0.0062 ohm, TDSON, Surface Mount (Alt: SP000453656) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 9 Weeks, 0 Days EBV - 355000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 285000
  • 5,000 $0.4032
  • 285,000 $0.3731
$0.3731 / $0.4032 Buy Now
Win Source Electronics MOSFET N-CH 60V 50A TDSON-8 25000
  • 85 $0.6234
  • 200 $0.5116
  • 305 $0.4956
  • 420 $0.4796
  • 540 $0.4636
  • 725 $0.4156
$0.4156 / $0.6234 Buy Now

Part Details for BSC076N06NS3GATMA1

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BSC076N06NS3GATMA1 Part Data Attributes

BSC076N06NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
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BSC076N06NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.0076 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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