Part Details for BSC0802LSATMA1 by Infineon Technologies AG
Overview of BSC0802LSATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Environmental Monitoring
Industrial Automation
Price & Stock for BSC0802LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH7107
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Newark | Mosfet, N-Ch, 100V, 100A, Pg-Tdson Rohs Compliant: Yes |Infineon BSC0802LSATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 497 |
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$1.6500 / $2.5600 | Buy Now |
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DISTI #
86AK4462
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Newark | Mosfet, N-Ch, 100V, 100A, Pg-Tdson Rohs Compliant: Yes |Infineon BSC0802LSATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.5400 | Buy Now |
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DISTI #
448-BSC0802LSATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 20A/100A TDSON Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6020 In Stock |
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$1.4764 / $3.1600 | Buy Now |
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Rochester Electronics | BSC0802 - Trench >=100V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 3116 |
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$1.4600 / $1.7200 | Buy Now |
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CHIPMALL.COM LIMITED | OptiMOS PD power MOSFET is Infineons portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products with best-in-class performance for differentiated designs in compact, lightweight packages. | 2567 |
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$1.0183 | Buy Now |
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DISTI #
3501520
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 100A, PG-TDSON RoHS: Compliant Min Qty: 5 Container: Cut Tape | 1655 |
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$1.6055 / $2.1261 | Buy Now |
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DISTI #
3501520RL
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 100A, PG-TDSON RoHS: Compliant Min Qty: 50 Container: Reel | 1655 |
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$1.6055 / $1.9941 | Buy Now |
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DISTI #
3501520RL
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Farnell | MOSFET, N-CH, 100V, 100A, PG-TDSON RoHS: Compliant Min Qty: 50 Lead time: 29 Weeks, 1 Days Container: Reel | 1655 |
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$1.6508 / $2.0510 | Buy Now |
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DISTI #
3501520
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Farnell | MOSFET, N-CH, 100V, 100A, PG-TDSON RoHS: Compliant Min Qty: 5 Lead time: 29 Weeks, 1 Days Container: Cut Tape | 1655 |
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$1.6508 / $2.1885 | Buy Now |
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DISTI #
4319324
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Farnell | MOSFET, N-CH, 100V, 100A, PG-TDSON RoHS: Compliant Min Qty: 5000 Lead time: 29 Weeks, 1 Days Container: Reel | 0 |
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$1.5382 / $1.5632 | Buy Now |
Part Details for BSC0802LSATMA1
BSC0802LSATMA1 CAD Models
BSC0802LSATMA1 Part Data Attributes
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BSC0802LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0802LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 100V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON, SOP-8 | |
| Reach Compliance Code | not_compliant | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 301 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0034 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 60 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |