Datasheets
BSC090N03LSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC090N03LSGATMA1 by Infineon Technologies AG

Overview of BSC090N03LSGATMA1 by Infineon Technologies AG

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Price & Stock for BSC090N03LSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 60R2505
Newark Mosfet, N Ch, 48A, 30V, Pg-Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:48A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0075Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:-, Power Rohs Compliant: Yes |Infineon BSC090N03LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 4567
  • 1 $0.7800
  • 10 $0.6870
  • 100 $0.5260
  • 500 $0.4160
  • 1,000 $0.3330
  • 2,500 $0.3020
$0.3020 / $0.7800 Buy Now
DISTI # BSC090N03LSGATMA1CT-ND
DigiKey MOSFET N-CH 30V 13A/48A TDSON Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 22725
In Stock
  • 1 $0.6800
  • 10 $0.5850
  • 100 $0.4052
  • 500 $0.3386
  • 1,000 $0.2881
  • 2,000 $0.2566
  • 5,000 $0.2431
  • 10,000 $0.2251
  • 25,000 $0.2229
$0.2229 / $0.6800 Buy Now
DISTI # BSC090N03LSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2378
  • 10,000 $0.2303
  • 20,000 $0.2229
  • 30,000 $0.2155
  • 40,000 $0.2080
$0.2080 / $0.2378 Buy Now
DISTI # 726-BSC090N03LSGATMA
Mouser Electronics MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 RoHS: Compliant 137
  • 1 $0.6200
  • 10 $0.5370
  • 100 $0.3810
  • 500 $0.3240
  • 1,000 $0.2510
  • 2,500 $0.2470
  • 5,000 $0.2420
  • 10,000 $0.2250
  • 25,000 $0.2190
$0.2190 / $0.6200 Buy Now
Future Electronics Single N-Channel 30 V 9 mOhm 14 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.2250
  • 10,000 $0.2200
  • 15,000 $0.2200
  • 20,000 $0.2150
$0.2150 / $0.2250 Buy Now
Future Electronics Single N-Channel 30 V 9 mOhm 14 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.2250
  • 10,000 $0.2200
  • 15,000 $0.2200
  • 20,000 $0.2150
$0.2150 / $0.2250 Buy Now
Future Electronics Single N-Channel 30 V 9 mOhm 14 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $0.2900
  • 20 $0.2600
  • 100 $0.2450
  • 500 $0.2350
  • 2,500 $0.2150
$0.2150 / $0.2900 Buy Now
DISTI # BSC090N03LSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2378
  • 10,000 $0.2303
  • 20,000 $0.2229
  • 30,000 $0.2155
  • 40,000 $0.2080
$0.2080 / $0.2378 Buy Now
DISTI # BSC090N03LSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2378
  • 10,000 $0.2303
  • 20,000 $0.2229
  • 30,000 $0.2155
  • 40,000 $0.2080
$0.2080 / $0.2378 Buy Now
DISTI # SP000275115
EBV Elektronik Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: SP000275115) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 1775458
element14 Asia-Pacific MOSFET, N CH, 48A, 30V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Container: Each 4567
  • 1 $0.7251
  • 10 $0.6365
  • 100 $0.4336
  • 500 $0.3626
  • 1,000 $0.3091
  • 2,500 $0.2915
  • 5,000 $0.2842
$0.2842 / $0.7251 Buy Now
DISTI # 1775458
Farnell MOSFET, N CH, 48A, 30V, PG-TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 29 Weeks, 1 Days Container: Each 4567
  • 1 $0.7434
  • 10 $0.6209
  • 100 $0.3936
  • 500 $0.3336
  • 1,000 $0.2524
  • 5,000 $0.2474
$0.2474 / $0.7434 Buy Now

Part Details for BSC090N03LSGATMA1

BSC090N03LSGATMA1 CAD Models

BSC090N03LSGATMA1 Part Data Attributes

BSC090N03LSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC090N03LSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.0133 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 192 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC090N03LSGATMA1

This table gives cross-reference parts and alternative options found for BSC090N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC090N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC090N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03LSGATMA1 vs BSC090N03LSG
Part Number Description Manufacturer Compare
BSC090N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03LSGATMA1 vs BSC090N03LSG
BSC100N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03LSGATMA1 vs BSC100N03LSG
STSJ50NH3LL 12A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWER, SOP-8 STMicroelectronics BSC090N03LSGATMA1 vs STSJ50NH3LL
CSD17579Q5A 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP Texas Instruments BSC090N03LSGATMA1 vs CSD17579Q5A
BSC119N03SG Power Field-Effect Transistor, 11.9A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03LSGATMA1 vs BSC119N03SG
BSC120N03LSG Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC090N03LSGATMA1 vs BSC120N03LSG

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