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Part Details for BSC093N04LSG by Infineon Technologies AG
Overview of BSC093N04LSG by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC093N04LSG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | 13 A, 40 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET | 16 |
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$0.7560 / $0.9450 | Buy Now |
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Quest Components | 13 A, 40 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET | 92 |
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$0.5950 / $1.1900 | Buy Now |
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Quest Components | 13 A, 40 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET | 3 |
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$1.1900 | Buy Now |
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Ameya Holding Limited | 40V,49A,N Channel Power MOSFET | 7411 |
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ComSIT USA | OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 19490 |
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RFQ | |
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CHIPMALL.COM LIMITED | 40V 13A 9.3m@10V,40A 2.5W 2V@14uA 1PCSNChannel TDSON-8-EP5x6 MOSFETs ROHS | 5696 |
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$0.2193 / $0.4489 | Buy Now |
Part Details for BSC093N04LSG
BSC093N04LSG CAD Models
BSC093N04LSG Part Data Attributes
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BSC093N04LSG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC093N04LSG
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SON | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 10 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0093 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 196 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC093N04LSG
This table gives cross-reference parts and alternative options found for BSC093N04LSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC093N04LSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC093N04LSGATMA1 | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | Infineon Technologies AG | BSC093N04LSG vs BSC093N04LSGATMA1 |