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Part Details for BSC100N06LS3GATMA1 by Infineon Technologies AG
Overview of BSC100N06LS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC100N06LS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47W3311
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Newark | Mosfet, N Channel, 60V, 50A, 8Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSC100N06LS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 95073 |
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$0.3810 / $0.4160 | Buy Now |
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DISTI #
BSC100N06LS3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC100N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 25000 |
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RFQ | |
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DISTI #
47W3311
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Avnet Americas | Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount - Bulk (Alt: 47W3311) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 15630 Partner Stock |
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$0.5010 / $1.2100 | Buy Now |
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Bristol Electronics | 1471 |
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RFQ | ||
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DISTI #
BSC100N06LS3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 60V, 36A, Idm: 200A, 50W, PG-TDSON-8 Min Qty: 1 | 2081 |
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$0.5670 / $1.1260 | Buy Now |
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NexGen Digital | 2 |
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RFQ | ||
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DISTI #
C1S322000441668
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Chip1Stop | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape | 12589 |
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$0.3760 / $1.0400 | Buy Now |
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DISTI #
C1S322000281446
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Chip1Stop | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 1041 |
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$0.4760 / $1.0923 | Buy Now |
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DISTI #
SP000453664
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EBV Elektronik | Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount (Alt: SP000453664) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 2010000 |
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Buy Now | |
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New Advantage Corporation | Single N-Channel 60 V 10 mOhm 45 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 | 105000 |
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$0.4400 / $0.4714 | Buy Now |
Part Details for BSC100N06LS3GATMA1
BSC100N06LS3GATMA1 CAD Models
BSC100N06LS3GATMA1 Part Data Attributes
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BSC100N06LS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC100N06LS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 22 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |