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Power Field-Effect Transistor, 12A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 5 | 90 |
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$0.3938 / $1.0500 | Buy Now |
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Quest Components | 12 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET | 72 |
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$0.7000 / $1.4000 | Buy Now |
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Quest Components | 12 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET | 2 |
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$0.8529 | Buy Now |
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LCSC | 60V 50A 50W 11m10V50A 4V23uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS | 151 |
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$0.4296 / $0.7364 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor | 45008 |
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$1.6960 / $2.5440 | Buy Now |
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BSC110N06NS3G
Infineon Technologies AG
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Datasheet
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BSC110N06NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 22 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |