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Part Details for BSC123N08NS3GATMA1 by Infineon Technologies AG
Overview of BSC123N08NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for BSC123N08NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
60R2515
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Newark | Mosfet, N Channel, 80V, 55A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:55A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC123N08NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 95099 |
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$0.4470 / $0.4870 | Buy Now |
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DISTI #
BSC123N08NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 25000 |
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$0.4293 | Buy Now |
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DISTI #
60R2515
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Avnet Americas | Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount - Bulk (Alt: 60R2515) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 11764 Partner Stock |
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$0.6480 / $1.5700 | Buy Now |
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Bristol Electronics | 1083 |
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RFQ | ||
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Rochester Electronics | BSC123N08NS3 G - TRENCH 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 99988 |
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$0.4865 / $0.5724 | Buy Now |
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DISTI #
BSC123N08NS3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 80V, 55A, 66W, PG-TDSON-8 Min Qty: 1 | 2348 |
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$0.6500 / $1.2000 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 102 |
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RFQ | |
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DISTI #
C1S322000840346
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 39325 |
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$0.4100 / $1.4400 | Buy Now |
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DISTI #
C1S322000090020
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Chip1Stop | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP RoHS: Compliant Container: Cut Tape | 200 |
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$0.5240 / $0.8540 | Buy Now |
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DISTI #
SP000443916
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EBV Elektronik | Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount (Alt: SP000443916) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 9 Weeks, 0 Days | EBV - 165000 |
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Buy Now |
Part Details for BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 CAD Models
BSC123N08NS3GATMA1 Part Data Attributes
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BSC123N08NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC123N08NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.0123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 66 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC123N08NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC123N08NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC123N08NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC123N08NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC123N08NS3GATMA1 vs BSC123N08NS3G |
| BSC123N08NSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC123N08NS3GATMA1 vs BSC123N08NSG |
| BSZ123N08NS3GATMA1 | Infineon Technologies AG | $0.9417 | Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSC123N08NS3GATMA1 vs BSZ123N08NS3GATMA1 |