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Transistors / Power Field-Effect Transistors / BSC123N08NS3GATMA1
Datasheets
BSC123N08NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC123N08NS3GATMA1 by Infineon Technologies AG

Overview of BSC123N08NS3GATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for BSC123N08NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # BSC123N08NS3GATMA1CT-ND
DigiKey MOSFET N-CH 80V 11A/55A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 19224
In Stock
  • 1 $1.5100
  • 10 $1.2340
  • 100 $0.9598
  • 500 $0.8135
  • 1,000 $0.6627
  • 2,000 $0.6238
  • 5,000 $0.5941
  • 10,000 $0.5667
$0.5667 / $1.5100 Buy Now
DISTI # BSC123N08NS3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.6034
  • 10,000 $0.5845
  • 20,000 $0.5656
  • 30,000 $0.5468
  • 40,000 $0.5279
$0.5279 / $0.6034 Buy Now
DISTI # 60R2515
Avnet Americas Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount - Bulk (Alt: 60R2515) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 26954 Partner Stock
  • 1 $1.5700
  • 10 $1.2900
  • 100 $0.9980
  • 500 $0.8470
  • 1,000 $0.6490
$0.6490 / $1.5700 Buy Now
DISTI # 726-BSC123N08NS3GATM
Mouser Electronics MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 RoHS: Compliant 60156
  • 1 $1.5100
  • 10 $1.2400
  • 100 $0.9600
  • 500 $0.8140
  • 1,000 $0.6240
  • 2,500 $0.6230
  • 5,000 $0.5750
  • 10,000 $0.5510
$0.5510 / $1.5100 Buy Now
Future Electronics Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 30000
Reel
  • 5,000 $0.5650
  • 10,000 $0.5500
  • 15,000 $0.5400
$0.5400 / $0.5650 Buy Now
Future Electronics Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 5000
Reel
  • 5,000 $0.5650
  • 10,000 $0.5500
  • 15,000 $0.5400
$0.5400 / $0.5650 Buy Now
Future Electronics Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.5400
$0.5400 Buy Now
Bristol Electronics   1083
RFQ
DISTI # BSC123N08NS3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.6034
  • 10,000 $0.5845
  • 20,000 $0.5656
  • 30,000 $0.5468
  • 40,000 $0.5279
$0.5279 / $0.6034 Buy Now
DISTI # 60R2515
Avnet Americas Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount - Bulk (Alt: 60R2515) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 26954 Partner Stock
  • 1 $1.5700
  • 10 $1.2900
  • 100 $0.9980
  • 500 $0.8470
  • 1,000 $0.6490
$0.6490 / $1.5700 Buy Now
DISTI # BSC123N08NS3GATMA1
TME Transistor: N-MOSFET, unipolar, 80V, 55A, 66W, PG-TDSON-8 Min Qty: 1 2903
  • 1 $1.3500
  • 3 $0.9600
  • 10 $0.8500
  • 100 $0.7600
  • 500 $0.6900
$0.6900 / $1.3500 Buy Now
Ameya Holding Limited MOSFET BSC123N08NS3G TDSON08 7922
RFQ
DISTI # BSC123N08NS3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.6034
  • 10,000 $0.5845
  • 20,000 $0.5656
  • 30,000 $0.5468
  • 40,000 $0.5279
$0.5279 / $0.6034 Buy Now
DISTI # 60R2515
Avnet Americas Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount - Bulk (Alt: 60R2515) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 26954 Partner Stock
  • 1 $1.5700
  • 10 $1.2900
  • 100 $0.9980
  • 500 $0.8470
  • 1,000 $0.6490
$0.6490 / $1.5700 Buy Now
DISTI # SP000443916
EBV Elektronik Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount (Alt: SP000443916) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 2 Weeks, 5 Days EBV - 220000
Buy Now
New Advantage Corporation Single N-Channel 80 V 24 mOhm 25 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 35000
  • 5,000 $0.4071
  • 35,000 $0.3800
$0.3800 / $0.4071 Buy Now
Win Source Electronics MOSFET N-CH 80V 55A TDSON-8 453560
  • 75 $0.7070
  • 175 $0.5800
  • 270 $0.5620
  • 370 $0.5440
  • 480 $0.5260
  • 640 $0.4710
$0.4710 / $0.7070 Buy Now

Part Details for BSC123N08NS3GATMA1

BSC123N08NS3GATMA1 CAD Models

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BSC123N08NS3GATMA1 Part Data Attributes

Parametric Data
BSC123N08NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC123N08NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 70 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.0123 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 66 W
Pulsed Drain Current-Max (IDM) 220 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC123N08NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC123N08NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC123N08NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ123N08NS3GATMA1 Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSC123N08NS3GATMA1 vs BSZ123N08NS3GATMA1
BSC123N08NSG Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC123N08NS3GATMA1 vs BSC123N08NSG
BSZ123N08NS3GXT Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSC123N08NS3GATMA1 vs BSZ123N08NS3GXT

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