Part Details for BSC123N08NS3GXT by Infineon Technologies AG
Overview of BSC123N08NS3GXT by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC123N08NS3GXT
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSC123N08NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
$0.5279 / $0.6034 | Buy Now |
DISTI #
BSC123N08NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
$0.5279 / $0.6034 | Buy Now |
DISTI #
BSC123N08NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
$0.5279 / $0.6034 | Buy Now |
Part Details for BSC123N08NS3GXT
BSC123N08NS3GXT CAD Models
BSC123N08NS3GXT Part Data Attributes
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BSC123N08NS3GXT
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC123N08NS3GXT
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.0123 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 66 W | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC123N08NS3GXT
This table gives cross-reference parts and alternative options found for BSC123N08NS3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC123N08NS3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSZ123N08NS3GATMA1 | Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSC123N08NS3GXT vs BSZ123N08NS3GATMA1 |
BSC123N08NSG | Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC123N08NS3GXT vs BSC123N08NSG |
BSZ123N08NS3GXT | Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSC123N08NS3GXT vs BSZ123N08NS3GXT |