Datasheets
BSC123N08NS3GXT by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC123N08NS3GXT by Infineon Technologies AG

Overview of BSC123N08NS3GXT by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for BSC123N08NS3GXT

Part # Distributor Description Stock Price Buy
DISTI # BSC123N08NS3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.6034
  • 10,000 $0.5845
  • 20,000 $0.5656
  • 30,000 $0.5468
  • 40,000 $0.5279
$0.5279 / $0.6034 Buy Now
DISTI # BSC123N08NS3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.6034
  • 10,000 $0.5845
  • 20,000 $0.5656
  • 30,000 $0.5468
  • 40,000 $0.5279
$0.5279 / $0.6034 Buy Now
DISTI # BSC123N08NS3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $0.6034
  • 10,000 $0.5845
  • 20,000 $0.5656
  • 30,000 $0.5468
  • 40,000 $0.5279
$0.5279 / $0.6034 Buy Now

Part Details for BSC123N08NS3GXT

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BSC123N08NS3GXT Part Data Attributes

BSC123N08NS3GXT Infineon Technologies AG
Buy Now Datasheet
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BSC123N08NS3GXT Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Avalanche Energy Rating (Eas) 70 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.0123 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 66 W
Pulsed Drain Current-Max (IDM) 220 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC123N08NS3GXT

This table gives cross-reference parts and alternative options found for BSC123N08NS3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC123N08NS3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ123N08NS3GATMA1 Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSC123N08NS3GXT vs BSZ123N08NS3GATMA1
BSC123N08NSG Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC123N08NS3GXT vs BSC123N08NSG
BSZ123N08NS3GXT Power Field-Effect Transistor, 10A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSC123N08NS3GXT vs BSZ123N08NS3GXT

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