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Part Details for BSC160N15NS5ATMA1 by Infineon Technologies AG
Overview of BSC160N15NS5ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for BSC160N15NS5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
43AC2205
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Newark | Mosfet, N-Ch, 150V, 56A, Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:56A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.0137Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.8V, Power Rohs Compliant: Yes |Infineon BSC160N15NS5ATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10195 |
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$1.5800 / $2.7700 | Buy Now |
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DISTI #
86AK4475
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Newark | Mosfet, N-Ch, 150V, 56A, Tdson Rohs Compliant: Yes |Infineon BSC160N15NS5ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.2500 | Buy Now |
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DISTI #
BSC160N15NS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 56A TDSON Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
10664 In Stock |
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$1.2046 / $2.7800 | Buy Now |
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DISTI #
BSC160N15NS5ATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 36A 8-Pin TDSON EP - Tape and Reel (Alt: BSC160N15NS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 26 Weeks, 0 Days Container: Reel | 5000 |
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$1.0871 / $1.2424 | Buy Now |
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DISTI #
726-BSC160N15NS5ATMA
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 37019 |
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$1.1600 / $2.5700 | Buy Now |
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Future Electronics | BSC160N15NS5 Series 150 V 56 A SMT N-Ch OptiMOS™ 5 Power-Transistor - SuperSO-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 15000Reel |
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$1.1400 | Buy Now |
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Future Electronics | BSC160N15NS5 Series 150 V 56 A SMT N-Ch OptiMOS™ 5 Power-Transistor - SuperSO-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 10000Reel |
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$1.1400 | Buy Now |
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Bristol Electronics | 4350 |
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RFQ | ||
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Bristol Electronics | 8257 |
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RFQ | ||
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Quest Components | 16 |
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$1.8000 / $2.8800 | Buy Now |
Part Details for BSC160N15NS5ATMA1
BSC160N15NS5ATMA1 CAD Models
BSC160N15NS5ATMA1 Part Data Attributes
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BSC160N15NS5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC160N15NS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 43 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 224 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC160N15NS5ATMA1
This table gives cross-reference parts and alternative options found for BSC160N15NS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC160N15NS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC190N15NS3G | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC160N15NS5ATMA1 vs BSC190N15NS3G |
| BSC190N15NS3GATMA1 | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC160N15NS5ATMA1 vs BSC190N15NS3GATMA1 |
| SIR622DP-T1-GE3 | Power Field-Effect Transistor, | Vishay Intertechnologies | BSC160N15NS5ATMA1 vs SIR622DP-T1-GE3 |
| BSC160N15NS5 | Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Infineon Technologies AG | BSC160N15NS5ATMA1 vs BSC160N15NS5 |