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Transistors / Power Field-Effect Transistors / BSC320N20NS3GATMA1
Datasheets
BSC320N20NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC320N20NS3GATMA1 by Infineon Technologies AG

Overview of BSC320N20NS3GATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for BSC320N20NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1337
Newark Mosfet, N-Ch, 200V, 36A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 52692
  • 1 $1.6600
$1.6600 Buy Now
DISTI # 86AK4479
Newark Mosfet, N-Ch, 200V, 36A, Tdson Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.5700
$1.5700 Buy Now
DISTI # BSC320N20NS3GATMA1
Avnet Americas Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC320N20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 25000
RFQ
DISTI # 79X1337
Avnet Americas Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1337) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 1991 Partner Stock
  • 1 $1.9800
  • 10 $2.8100
  • 25 $2.6500
  • 50 $2.4600
  • 100 $2.2800
$1.9800 / $2.8100 Buy Now
Ameya Holding Limited Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8 2902
RFQ
NexGen Digital   4
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 70
RFQ
DISTI # C1S322000464650
Chip1Stop Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R RoHS: Compliant 5000
  • 5,000 $1.3580
$1.3580 Buy Now
DISTI # C1S322000250826
Chip1Stop Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R RoHS: Compliant 4700
  • 1 $2.9520
  • 10 $2.1730
  • 25 $2.1520
  • 100 $1.9800
$1.9800 / $2.9520 Buy Now
DISTI # C1S322000840355
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2874
  • 1 $2.6500
  • 10 $2.4300
  • 50 $2.2700
  • 100 $1.9600
  • 500 $1.4900
  • 1,000 $1.2900
  • 2,000 $1.2500
$1.2500 / $2.6500 Buy Now
DISTI # SP000676410
EBV Elektronik Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R (Alt: SP000676410) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 85000
Buy Now
New Advantage Corporation Single N-Channel 200 V 32 mOhm 22 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $1.7000
  • 10,000 $1.5900
$1.5900 / $1.7000 Buy Now
Win Source Electronics MOSFET N-CH 200V 36A TDSON-8 14900
  • 35 $1.6250
  • 75 $1.3340
  • 120 $1.2920
  • 160 $1.2500
  • 210 $1.2090
  • 280 $1.0840
$1.0840 / $1.6250 Buy Now

Part Details for BSC320N20NS3GATMA1

BSC320N20NS3GATMA1 CAD Models

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BSC320N20NS3GATMA1 Part Data Attributes

Parametric Data
BSC320N20NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC320N20NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 144 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC320N20NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC320N20NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC320N20NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB320N20N3GATMA1 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPB320N20N3GATMA1
BSC320N20NS3G Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC320N20NS3GATMA1 vs BSC320N20NS3G
IPD320N20N3GXT Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPD320N20N3GXT
IPB320N20N3G Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPB320N20N3G
IPD320N20N3GATMA1 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPD320N20N3GATMA1
BSC350N20NSFDATMA1 Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 Infineon Technologies AG BSC320N20NS3GATMA1 vs BSC350N20NSFDATMA1

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