Datasheets
BSC320N20NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC320N20NS3GATMA1 by Infineon Technologies AG

Results Overview of BSC320N20NS3GATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

BSC320N20NS3GATMA1 Information

BSC320N20NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC320N20NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 78AH9594
Newark Trench >=100V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel 20000
Buy Now
DISTI # 79X1337
Newark Mosfet, N-Ch, 200V, 36A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1800
  • 1 $1.8400
  • 10 $1.6800
  • 25 $1.6800
  • 50 $1.6800
  • 100 $1.5500
  • 250 $1.5500
  • 500 $1.5500
$1.5500 / $1.8400 Buy Now
DISTI # 86AK4479
Newark Mosfet, N-Ch, 200V, 36A, Tdson Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.4700
$1.4700 Buy Now
DISTI # BSC320N20NS3GATMA1
Avnet Americas Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC320N20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 10000
  • 5,000 $0.9496
  • 10,000 $0.8239
  • 20,000 $0.8129
  • 30,000 $0.8033
  • 40,000 $0.7924
$0.7924 / $0.9496 Buy Now
DISTI # 79X1337
Avnet Americas Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1337) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 1800 Partner Stock
  • 1 $1.8800
  • 10 $2.8100
  • 25 $2.6500
  • 50 $2.4600
  • 100 $2.2800
$1.8800 / $2.8100 Buy Now
Rochester Electronics OptiMOS3 Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 1758
  • 1 $1.1400
  • 25 $1.1200
  • 100 $1.0700
  • 500 $1.0300
  • 1,000 $0.9690
$0.9690 / $1.1400 Buy Now
NexGen Digital   4
RFQ
DISTI # C1S322000840355
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 2874
  • 1 $1.4300
  • 10 $1.1900
  • 50 $1.1800
  • 100 $1.0400
  • 500 $1.0300
  • 2,000 $0.9270
$0.9270 / $1.4300 Buy Now
DISTI # SP000676410
EBV Elektronik Trans MOSFET NCH 200V 36A 8Pin TDSON TR (Alt: SP000676410) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 70000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 55000
  • 5,000 $1.2900
  • 55,000 $1.2000
$1.2000 / $1.2900 Buy Now
Win Source Electronics MOSFET N-CH 200V 36A TDSON-8 14900
  • 30 $1.6960
  • 75 $1.3920
  • 115 $1.3480
  • 155 $1.3050
  • 200 $1.2610
  • 270 $1.1310
$1.1310 / $1.6960 Buy Now

Part Details for BSC320N20NS3GATMA1

BSC320N20NS3GATMA1 CAD Models

BSC320N20NS3GATMA1 Part Data Attributes

BSC320N20NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC320N20NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 144 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC320N20NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC320N20NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC320N20NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB320N20N3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN BSC320N20NS3GATMA1 vs IPB320N20N3G
IPD320N20N3GXT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN BSC320N20NS3GATMA1 vs IPD320N20N3GXT
BSC320N20NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC320N20NS3GATMA1 vs BSC320N20NS3G
TPH2900ENH Toshiba America Electronic Components Check for Price Power MOSFET - Nch 150V<VDSS≤250V BSC320N20NS3GATMA1 vs TPH2900ENH
BSC350N20NSFDATMA1 Infineon Technologies AG $1.8292 Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 BSC320N20NS3GATMA1 vs BSC350N20NSFDATMA1

BSC320N20NS3GATMA1 Related Parts

BSC320N20NS3GATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC320N20NS3GATMA1 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).

  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.

  • The maximum allowable power dissipation for the BSC320N20NS3GATMA1 is dependent on the thermal resistance and the maximum junction temperature. Refer to the datasheet for the specific thermal resistance values and calculate the maximum power dissipation accordingly.

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