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Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC320N20NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH9594
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Newark | Trench >=100V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel | 20000 |
|
Buy Now | |
DISTI #
79X1337
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Newark | Mosfet, N-Ch, 200V, 36A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1800 |
|
$1.5500 / $1.8400 | Buy Now |
DISTI #
86AK4479
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Newark | Mosfet, N-Ch, 200V, 36A, Tdson Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.4700 | Buy Now |
DISTI #
BSC320N20NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC320N20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 10000 |
|
$0.7924 / $0.9496 | Buy Now |
DISTI #
79X1337
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Avnet Americas | Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1337) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 1800 Partner Stock |
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$1.8800 / $2.8100 | Buy Now |
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Rochester Electronics | OptiMOS3 Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 | 1758 |
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$0.9690 / $1.1400 | Buy Now |
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NexGen Digital | 4 |
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RFQ | ||
DISTI #
C1S322000840355
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Chip One Stop | MOSFET RoHS: Compliant Container: Cut Tape | 2874 |
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$0.9270 / $1.4300 | Buy Now |
DISTI #
SP000676410
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EBV Elektronik | Trans MOSFET NCH 200V 36A 8Pin TDSON TR (Alt: SP000676410) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days | EBV - 70000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 5000 | 55000 |
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$1.2000 / $1.2900 | Buy Now |
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BSC320N20NS3GATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC320N20NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 144 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC320N20NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC320N20NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB320N20N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | BSC320N20NS3GATMA1 vs IPB320N20N3G |
IPD320N20N3GXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | BSC320N20NS3GATMA1 vs IPD320N20N3GXT |
BSC320N20NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC320N20NS3GATMA1 vs BSC320N20NS3G |
TPH2900ENH | Toshiba America Electronic Components | Check for Price | Power MOSFET - Nch 150V<VDSS≤250V | BSC320N20NS3GATMA1 vs TPH2900ENH |
BSC350N20NSFDATMA1 | Infineon Technologies AG | $1.8292 | Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 | BSC320N20NS3GATMA1 vs BSC350N20NSFDATMA1 |