Datasheets
BSC350N20NSFDATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8

Part Details for BSC350N20NSFDATMA1 by Infineon Technologies AG

Overview of BSC350N20NSFDATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Automotive Motor control systems

Price & Stock for BSC350N20NSFDATMA1

Part # Distributor Description Stock Price Buy
DISTI # 24AC4562
Newark Mosfet, N-Ch, 200V, 35A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC350N20NSFDATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5070
  • 1 $3.3400
  • 10 $2.5500
  • 25 $2.4600
  • 50 $2.1800
  • 100 $1.9000
  • 250 $1.7400
$1.7400 / $3.3400 Buy Now
DISTI # 86AK4480
Newark Mosfet, N-Ch, 200V, 35A, Tdson Rohs Compliant: Yes |Infineon BSC350N20NSFDATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.5800
$1.5800 Buy Now
DISTI # BSC350N20NSFDATMA1
Avnet Americas Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.3722
$1.3722 Buy Now
Bristol Electronics   894
RFQ
DISTI # C1S322000657083
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 4980
  • 1 $1.6600
  • 10 $1.5200
  • 50 $1.5100
  • 100 $1.4800
  • 1,000 $1.4700
  • 2,000 $1.3400
$1.3400 / $1.6600 Buy Now
DISTI # SP001108124
EBV Elektronik Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R (Alt: SP001108124) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 200V 35A TDSON-8-1 87600
  • 24 $2.1534
  • 57 $1.7669
  • 88 $1.7116
  • 121 $1.6564
  • 157 $1.6012
  • 209 $1.4356
$1.4356 / $2.1534 Buy Now

Part Details for BSC350N20NSFDATMA1

BSC350N20NSFDATMA1 CAD Models

BSC350N20NSFDATMA1 Part Data Attributes

BSC350N20NSFDATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC350N20NSFDATMA1 Infineon Technologies AG Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC350N20NSFDATMA1

This table gives cross-reference parts and alternative options found for BSC350N20NSFDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC350N20NSFDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC320N20NS3GATMA1 Infineon Technologies AG $1.8501 Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC350N20NSFDATMA1 vs BSC320N20NS3GATMA1
IPD320N20N3GATMA1 Infineon Technologies AG $1.7354 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN BSC350N20NSFDATMA1 vs IPD320N20N3GATMA1
IPB320N20N3GATMA1 Infineon Technologies AG $2.0252 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN BSC350N20NSFDATMA1 vs IPB320N20N3GATMA1

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