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Transistors / Power Field-Effect Transistors / BSC350N20NSFDATMA1
Datasheets
BSC350N20NSFDATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8

Part Details for BSC350N20NSFDATMA1 by Infineon Technologies AG

Results Overview of BSC350N20NSFDATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Automotive Motor control systems

BSC350N20NSFDATMA1 Information

BSC350N20NSFDATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC350N20NSFDATMA1

Part # Distributor Description Stock Price Buy
DISTI # 2770033RL
element14 Asia-Pacific , MOSFET, N, 200V, 35A, TDSON RoHS: Compliant Min Qty: 50 Container: Reel 1429
  • 50 $1.7300
  • 250 $1.4700
  • 1,000 $1.4600
$1.4600 / $1.7300 Buy Now
DISTI # 2770033
element14 Asia-Pacific , MOSFET, N, 200V, 35A, TDSON RoHS: Compliant Min Qty: 5 Container: Cut Tape 1429
  • 5 $2.1200
  • 50 $1.7300
  • 250 $1.4700
  • 1,000 $1.4600
$1.4600 / $2.1200 Buy Now
DISTI # BSC350N20NSFDATMA1
Avnet Americas Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.3722
$1.3722 Buy Now
Bristol Electronics   894
RFQ
Rochester Electronics 300V RoHS: Compliant Status: Active Min Qty: 1 4466
  • 1 $1.4800
  • 25 $1.4500
  • 100 $1.3900
  • 500 $1.3300
  • 1,000 $1.2600
$1.2600 / $1.4800 Buy Now
DISTI # C1S322000657083
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 4980
  • 5 $2.6400
  • 10 $1.8700
  • 50 $1.7400
  • 100 $1.4500
  • 1,000 $1.4400
  • 2,000 $1.3100
$1.3100 / $2.6400 Buy Now
DISTI # SP001108124
EBV Elektronik Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R (Alt: SP001108124) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 200V 35A TDSON-8-1 20000
  • 13 $4.0624
  • 31 $3.3333
  • 47 $3.2291
  • 64 $3.1250
  • 83 $3.0208
  • 111 $2.7083
$2.7083 / $4.0624 Buy Now

Part Details for BSC350N20NSFDATMA1

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BSC350N20NSFDATMA1 Part Data Attributes

Parametric Data
BSC350N20NSFDATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC350N20NSFDATMA1 Infineon Technologies AG Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SUPERSO8, TDSON-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC350N20NSFDATMA1

This table gives cross-reference parts and alternative options found for BSC350N20NSFDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC350N20NSFDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC320N20NS3GATMA1 Infineon Technologies AG $0.7608 Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC350N20NSFDATMA1 vs BSC320N20NS3GATMA1
BSC320N20NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC350N20NSFDATMA1 vs BSC320N20NS3G
TPH2900ENH Toshiba America Electronic Components Check for Price Power MOSFET - Nch 150V<VDSS≤250V BSC350N20NSFDATMA1 vs TPH2900ENH
IPB320N20N3GATMA1 Infineon Technologies AG $2.0548 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN BSC350N20NSFDATMA1 vs IPB320N20N3GATMA1

BSC350N20NSFDATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC350N20NSFDATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1 K/W, and ensuring good airflow around the device.

  • The recommended gate resistor value for the BSC350N20NSFDATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the BSC350N20NSFDATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.

  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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