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Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24AC4562
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Newark | Mosfet, N-Ch, 200V, 35A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC350N20NSFDATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5070 |
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$1.7400 / $3.3400 | Buy Now |
DISTI #
86AK4480
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Newark | Mosfet, N-Ch, 200V, 35A, Tdson Rohs Compliant: Yes |Infineon BSC350N20NSFDATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.5800 | Buy Now |
DISTI #
BSC350N20NSFDATMA1
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Avnet Americas | Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 5000 |
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$1.3722 | Buy Now |
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Bristol Electronics | 894 |
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RFQ | ||
DISTI #
C1S322000657083
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 4980 |
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$1.3400 / $1.6600 | Buy Now |
DISTI #
SP001108124
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EBV Elektronik | Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R (Alt: SP001108124) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 200V 35A TDSON-8-1 | 87600 |
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$1.4356 / $2.1534 | Buy Now |
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BSC350N20NSFDATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC350N20NSFDATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 97 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC350N20NSFDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC350N20NSFDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSC320N20NS3GATMA1 | Infineon Technologies AG | $1.8501 | Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC350N20NSFDATMA1 vs BSC320N20NS3GATMA1 |
IPD320N20N3GATMA1 | Infineon Technologies AG | $1.7354 | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN | BSC350N20NSFDATMA1 vs IPD320N20N3GATMA1 |
IPB320N20N3GATMA1 | Infineon Technologies AG | $2.0252 | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | BSC350N20NSFDATMA1 vs IPB320N20N3GATMA1 |