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Part Details for BSC600N25NS3GATMA1 by Infineon Technologies AG
Overview of BSC600N25NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC600N25NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78AH9596
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Newark | Trench >=100V Rohs Compliant: Yes |Infineon BSC600N25NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel | 390000 |
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$1.6700 | Buy Now |
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DISTI #
79X1338
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Newark | Mosfet, N-Ch, 250V, 25A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC600N25NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2326 |
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$1.8500 / $3.5900 | Buy Now |
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DISTI #
86AK4483
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Newark | Mosfet, N-Ch, 250V, 25A, Tdson Rohs Compliant: Yes |Infineon BSC600N25NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.6700 | Buy Now |
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DISTI #
BSC600N25NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 390000 |
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RFQ | |
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DISTI #
79X1338
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Avnet Americas | Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1338) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack | 2326 Partner Stock |
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$2.4300 / $3.5900 | Buy Now |
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DISTI #
C1S322000192531
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Chip1Stop | Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP RoHS: Compliant Container: Cut Tape | 4490 |
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$1.5700 / $2.2600 | Buy Now |
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DISTI #
C1S322000211012
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Chip1Stop | Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R RoHS: Compliant | 2688 |
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$1.6520 / $2.3630 | Buy Now |
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DISTI #
SP000676402
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EBV Elektronik | Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: SP000676402) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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|
LCSC | 250V 25A 125W 60m25A10V 4V90uA 1 N-Channel TDSON-8 MOSFETs ROHS | 29 |
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$2.3933 / $3.5875 | Buy Now |
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Win Source Electronics | MOSFET N-CH 250V 25A TDSON-8-1 | 59700 |
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$2.0730 / $3.1090 | Buy Now |
Part Details for BSC600N25NS3GATMA1
BSC600N25NS3GATMA1 CAD Models
BSC600N25NS3GATMA1 Part Data Attributes
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BSC600N25NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC600N25NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC600N25NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC600N25NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC600N25NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC600N25NS3G | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC600N25NS3GATMA1 vs BSC600N25NS3G |
| IPB600N25N3G | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BSC600N25NS3GATMA1 vs IPB600N25N3G |
| IPB600N25N3GATMA1 | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BSC600N25NS3GATMA1 vs IPB600N25N3GATMA1 |