Part Details for BSF110N06NT3GXUMA1 by Infineon Technologies AG
Overview of BSF110N06NT3GXUMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BSF110N06NT3GXUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSF110N06NT3GXUMA1-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 650 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
10700 In Stock |
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$0.4600 | Buy Now |
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Rochester Electronics | BSF110N06 - Power Field-Effect Transistor, 11A, 60V, 0.011ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 10700 |
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$0.3967 / $0.4667 | Buy Now |
Part Details for BSF110N06NT3GXUMA1
BSF110N06NT3GXUMA1 CAD Models
BSF110N06NT3GXUMA1 Part Data Attributes
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BSF110N06NT3GXUMA1
Infineon Technologies AG
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Datasheet
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BSF110N06NT3GXUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, METAL, WDSON-2, CANPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 188 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSF110N06NT3GXUMA1
This table gives cross-reference parts and alternative options found for BSF110N06NT3GXUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSF110N06NT3GXUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSZ110N06NS3GXT | Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSF110N06NT3GXUMA1 vs BSZ110N06NS3GXT |
| NTTFS5820NLTWG | Single N-Channel Power MOSFET 60V, 37A, 11.5mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL | onsemi | BSF110N06NT3GXUMA1 vs NTTFS5820NLTWG |
| BSZ110N06NS3G | Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSF110N06NT3GXUMA1 vs BSZ110N06NS3G |
| FDP14AN06LA0_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | BSF110N06NT3GXUMA1 vs FDP14AN06LA0_NL |
| BSZ110N06NS3GATMA1 | Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSF110N06NT3GXUMA1 vs BSZ110N06NS3GATMA1 |