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Transistors / IGBTs / BSM100GB120DN2K
Datasheets
BSM100GB120DN2K by:

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for BSM100GB120DN2K by Infineon Technologies AG

Overview of BSM100GB120DN2K by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for BSM100GB120DN2K

BSM100GB120DN2K Part Data Attributes

Parametric Data
BSM100GB120DN2K Infineon Technologies AG
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BSM100GB120DN2K Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 145 A
Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Voltage-Max 20 V
Number of Elements 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 700 W
VCEsat-Max 3.2 V

Alternate Parts for BSM100GB120DN2K

This table gives cross-reference parts and alternative options found for BSM100GB120DN2K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GB120DN2K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG400Q1US51 TRANSISTOR 520 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG400Q1US51
MG200Q1US51 TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG200Q1US51
2MBI150NE-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M240, 7 PIN Fuji Electric Co Ltd BSM100GB120DN2K vs 2MBI150NE-120
CM600HA-24A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4 Mitsubishi Electric BSM100GB120DN2K vs CM600HA-24A
CM600HA-24H Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel Mitsubishi Electric BSM100GB120DN2K vs CM600HA-24H
CM150DY-24H Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors BSM100GB120DN2K vs CM150DY-24H
MG300N1US1 TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG300N1US1
CM300HA-24H Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors BSM100GB120DN2K vs CM300HA-24H
MG100Q2YS51 TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG100Q2YS51
CM100DY-24H Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric BSM100GB120DN2K vs CM100DY-24H

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