Datasheets
BSM100GD60DLC by:

Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN

Part Details for BSM100GD60DLC by Eupec Gmbh & Co Kg

Overview of BSM100GD60DLC by Eupec Gmbh & Co Kg

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Price & Stock for BSM100GD60DLC

Part # Distributor Description Stock Price Buy
ComSIT USA IGBT-MODULE Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel RoHS: Not Compliant Europe - 7
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Part Details for BSM100GD60DLC

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BSM100GD60DLC Part Data Attributes:

BSM100GD60DLC Eupec Gmbh & Co Kg
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BSM100GD60DLC Eupec Gmbh & Co Kg Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer EUPEC GMBH & CO KG
Package Description FLANGE MOUNT, R-XUFM-X39
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 130 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X39
Number of Elements 6
Number of Terminals 39
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 430 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 36 ns
VCEsat-Max 2.45 V

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