Datasheets
BSM10GD120DN2E3224BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17

Part Details for BSM10GD120DN2E3224BOSA1 by Infineon Technologies AG

Overview of BSM10GD120DN2E3224BOSA1 by Infineon Technologies AG

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Price & Stock for BSM10GD120DN2E3224BOSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics LOW POWER ECONO RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 2272
  • 1 $57.8300
  • 25 $56.6700
  • 100 $54.3600
  • 500 $52.0400
  • 1,000 $49.1500
$49.1500 / $57.8300 Buy Now

Part Details for BSM10GD120DN2E3224BOSA1

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BSM10GD120DN2E3224BOSA1 Part Data Attributes

BSM10GD120DN2E3224BOSA1 Infineon Technologies AG
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BSM10GD120DN2E3224BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ECONOPACK-17
Pin Count 17
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 52 Weeks
Case Connection ISOLATED
Collector Current-Max (IC) 15 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 460 ns
Turn-on Time-Nom (ton) 105 ns

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