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Part Details for BSM120D12P2C005 by ROHM Semiconductor
Results Overview of BSM120D12P2C005 by ROHM Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSM120D12P2C005 Information
BSM120D12P2C005 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSM120D12P2C005
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05X9537
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Newark | Sic Mosfet, N-Ch, 1.2Kv, 120A, Module-10, Mosfet Module Configuration:Half Bridge, Channel Type:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:10Pins, Rds(On) Test Voltage:-, Product Range:- Rohs Compliant: Yes |Rohm BSM120D12P2C005 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$367.7200 / $367.7600 | Buy Now |
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Bristol Electronics | 18 |
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RFQ | ||
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DISTI #
BSM120D12P2C005
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Avnet Silica | Transistor MOSFET Array Dual NCH 1200V 134A 10Pin Case C Cardboard (Alt: BSM120D12P2C005) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 31 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
BSM120D12P2C005
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tray | 20 |
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$257.0000 / $338.0000 | Buy Now |
Part Details for BSM120D12P2C005
BSM120D12P2C005 CAD Models
BSM120D12P2C005 Part Data Attributes
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BSM120D12P2C005
ROHM Semiconductor
Buy Now
Datasheet
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BSM120D12P2C005
ROHM Semiconductor
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | MODULE-10/8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 120 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 780 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
BSM120D12P2C005 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSM120D12P2C005 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended derating guidelines, ensure proper thermal management, and consider using a heat sink if necessary.
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ROHM provides a recommended PCB layout and thermal design guide in their application notes. It's essential to follow these guidelines to ensure optimal performance and thermal management.
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Yes, the BSM120D12P2C005 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, gate drive requirements, and thermal management.
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The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. ROHM provides guidelines for selecting the optimal gate resistor value in their application notes.