Part Details for BSM120D12P2C005 by ROHM Semiconductor
Overview of BSM120D12P2C005 by ROHM Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for BSM120D12P2C005
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05X9537
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Newark | Mosfet Module, N Channel, 120 A, 1.2 Kv, 2.7 V Rohs Compliant: Yes |Rohm BSM120D12P2C005 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$383.2400 / $395.6300 | Buy Now |
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DISTI #
BSM120D12P2C005-ND
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DigiKey | MOSFET 2N-CH 1200V 120A MODULE Min Qty: 1 Lead time: 22 Weeks Container: Bulk |
11 In Stock |
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$380.3625 / $395.2200 | Buy Now |
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DISTI #
BSM120D12P2C005
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Avnet Americas | Transistor MOSFET Array Dual N-CH 1200V 134A 10-Pin Case C Cardboard - Bulk (Alt: BSM120D12P2C005) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
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$382.4808 / $435.4397 | Buy Now |
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DISTI #
755-BSM120D12P2C005
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Mouser Electronics | Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode) RoHS: Compliant | 13 |
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$380.2000 / $380.4700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 12 Package Multiple: 12 Container: Bulk | 0Bulk |
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$392.2900 | Buy Now |
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Bristol Electronics | 18 |
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RFQ | ||
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Quest Components | 14 |
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$634.4658 / $740.2101 | Buy Now | |
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Quest Components | 16 |
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$528.7215 / $616.8418 | Buy Now | |
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DISTI #
BSM120D12P2C005
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 1200V 134A 10-Pin Case C Cardboard - Bulk (Alt: BSM120D12P2C005) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
|
$382.4808 / $435.4397 | Buy Now |
|
DISTI #
BSM120D12P2C005
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 1200V 134A 10-Pin Case C Cardboard - Bulk (Alt: BSM120D12P2C005) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
|
$382.4808 / $435.4397 | Buy Now |
Part Details for BSM120D12P2C005
BSM120D12P2C005 CAD Models
BSM120D12P2C005 Part Data Attributes
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BSM120D12P2C005
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
BSM120D12P2C005
ROHM Semiconductor
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | MODULE-10/8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 120 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 780 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |