Datasheets
BSM15GD120DN2 by:

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17

Part Details for BSM15GD120DN2 by Infineon Technologies AG

Overview of BSM15GD120DN2 by Infineon Technologies AG

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Part Details for BSM15GD120DN2

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BSM15GD120DN2 Part Data Attributes:

BSM15GD120DN2 Infineon Technologies AG
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BSM15GD120DN2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ECONOPACK-17
Pin Count 17
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 25 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 145 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 100 ns
VCEsat-Max 3.2 V

Alternate Parts for BSM15GD120DN2

This table gives cross-reference parts and alternative options found for BSM15GD120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM15GD120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM15GD120DN2 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel Siemens BSM15GD120DN2 vs BSM15GD120DN2
Part Number Description Manufacturer Compare
6MBI15F-120 Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN Fuji Electric Co Ltd BSM15GD120DN2 vs 6MBI15F-120
BSM15GD120D2 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel Siemens BSM15GD120DN2 vs BSM15GD120D2
MG15Q6ES42 TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM15GD120DN2 vs MG15Q6ES42
BSM15GD120DN2E3224 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG BSM15GD120DN2 vs BSM15GD120DN2E3224
MG15Q6ES50 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM15GD120DN2 vs MG15Q6ES50
BSM15GD120D2 Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, Eupec Gmbh & Co Kg BSM15GD120DN2 vs BSM15GD120D2
CM15TF-24H Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel Powerex Power Semiconductors BSM15GD120DN2 vs CM15TF-24H
MG15Q6ES50A TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM15GD120DN2 vs MG15Q6ES50A
6MBI15L-120 Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, M607, 15 PIN Fuji Electric Co Ltd BSM15GD120DN2 vs 6MBI15L-120
BSM15GD120DN2 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel Siemens BSM15GD120DN2 vs BSM15GD120DN2

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