Datasheets
BSM200GA120DLCSHOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Part Details for BSM200GA120DLCSHOSA1 by Infineon Technologies AG

Overview of BSM200GA120DLCSHOSA1 by Infineon Technologies AG

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Price & Stock for BSM200GA120DLCSHOSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics BSMxGA120H - IGBT MOD 1.2kV 370A 1.45kW Module Tray RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 270
  • 1 $209.0500
  • 25 $204.8700
  • 100 $196.5100
  • 500 $188.1500
  • 1,000 $177.6900
$177.6900 / $209.0500 Buy Now

Part Details for BSM200GA120DLCSHOSA1

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BSM200GA120DLCSHOSA1 Part Data Attributes

BSM200GA120DLCSHOSA1 Infineon Technologies AG
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BSM200GA120DLCSHOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-5
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 370 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 650 ns
Turn-on Time-Nom (ton) 190 ns

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