Datasheets
BSM25GD120DLCE3224 by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

Part Details for BSM25GD120DLCE3224 by Eupec Gmbh & Co Kg

Overview of BSM25GD120DLCE3224 by Eupec Gmbh & Co Kg

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Price & Stock for BSM25GD120DLCE3224

Part # Distributor Description Stock Price Buy
ComSIT USA IGBT-MODULE Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel RoHS: Not Compliant Europe - 10
RFQ
Chip1Cloud IGBT-Module 20
RFQ

Part Details for BSM25GD120DLCE3224

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BSM25GD120DLCE3224 Part Data Attributes:

BSM25GD120DLCE3224 Eupec Gmbh & Co Kg
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BSM25GD120DLCE3224 Eupec Gmbh & Co Kg Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
Part Life Cycle Code Transferred
Ihs Manufacturer EUPEC GMBH & CO KG
Package Description MODULE-17
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 380 ns
Turn-on Time-Nom (ton) 120 ns
VCEsat-Max 2.6 V

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