Datasheets
BSM300GB120DLCHOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for BSM300GB120DLCHOSA1 by Infineon Technologies AG

Overview of BSM300GB120DLCHOSA1 by Infineon Technologies AG

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Price & Stock for BSM300GB120DLCHOSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics BSM300GB120 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 1
  • 1 $396.8700
  • 25 $388.9300
  • 100 $373.0600
  • 500 $357.1800
  • 1,000 $337.3400
$337.3400 / $396.8700 Buy Now

Part Details for BSM300GB120DLCHOSA1

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BSM300GB120DLCHOSA1 Part Data Attributes

BSM300GB120DLCHOSA1 Infineon Technologies AG
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BSM300GB120DLCHOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 625 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 650 ns
Turn-on Time-Nom (ton) 190 ns

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