Datasheets
BSM35GD120DLCE3224BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

Part Details for BSM35GD120DLCE3224BOSA1 by Infineon Technologies AG

Overview of BSM35GD120DLCE3224BOSA1 by Infineon Technologies AG

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Price & Stock for BSM35GD120DLCE3224BOSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics BSM35GD120DLC - LOW POWER ECONO RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 1
  • 1 $122.7800
  • 25 $120.3300
  • 100 $115.4200
  • 500 $110.5000
  • 1,000 $104.3600
$104.3600 / $122.7800 Buy Now

Part Details for BSM35GD120DLCE3224BOSA1

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BSM35GD120DLCE3224BOSA1 Part Data Attributes:

BSM35GD120DLCE3224BOSA1 Infineon Technologies AG
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BSM35GD120DLCE3224BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-17
Pin Count 17
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 70 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 370 ns
Turn-on Time-Nom (ton) 110 ns

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