Part Details for BSO064N03S by Infineon Technologies AG
Results Overview of BSO064N03S by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSO064N03S Information
BSO064N03S by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSO064N03S
BSO064N03S CAD Models
BSO064N03S Part Data Attributes
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BSO064N03S
Infineon Technologies AG
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Datasheet
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BSO064N03S
Infineon Technologies AG
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 180 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSO064N03S
This table gives cross-reference parts and alternative options found for BSO064N03S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO064N03S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS7760AF011 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | BSO064N03S vs FDS7760AF011 |
| RRS130N03TB | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | BSO064N03S vs RRS130N03TB |
| FDS7760A | Rochester Electronics LLC | Check for Price | 15000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | BSO064N03S vs FDS7760A |
| TPC8041 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal | BSO064N03S vs TPC8041 |
| FDS6680A | Rochester Electronics LLC | Check for Price | 12500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SO-8 | BSO064N03S vs FDS6680A |
| FDS7760AS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | BSO064N03S vs FDS7760AS62Z |
| BSO051N03MSG | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8 | BSO064N03S vs BSO051N03MSG |
| MMSF10N02ZR2 | onsemi | Check for Price | 10000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOP-8 | BSO064N03S vs MMSF10N02ZR2 |
| NDS8426A | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | BSO064N03S vs NDS8426A |
| FDS6680A_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | BSO064N03S vs FDS6680A_NL |