Part Details for BSO203P by Infineon Technologies AG
Overview of BSO203P by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BSO203P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSO203P
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Avnet Americas | - Tape and Reel (Alt: BSO203P) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 421 Partner Stock |
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RFQ | |
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Rochester Electronics | BSO203 - 20V-250V P-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 421 |
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$0.5082 / $0.5979 | Buy Now |
Part Details for BSO203P
BSO203P CAD Models
BSO203P Part Data Attributes
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BSO203P
Infineon Technologies AG
Buy Now
Datasheet
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BSO203P
Infineon Technologies AG
Power Field-Effect Transistor, 8.2A I(D), 20V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 97 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 8.2 A | |
Drain-source On Resistance-Max | 0.021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 32.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |