Part Details for BSP125H6327XTSA1 by Infineon Technologies AG
Results Overview of BSP125H6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Healthcare
Renewable Energy
Automotive
BSP125H6327XTSA1 Information
BSP125H6327XTSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSP125H6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AC0044
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Newark | Mosfet, N-Ch, 600V, 0.12A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:120Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Infineon BSP125H6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 111 |
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$0.1220 | Buy Now |
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DISTI #
86AK4499
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Newark | Mosfet, N-Ch, 600V, 0.12A, Sot-223 Rohs Compliant: Yes |Infineon BSP125H6327XTSA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3260 / $0.3360 | Buy Now |
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DISTI #
BSP125H6327XTSA1
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Avnet Americas | Trans MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP125H6327XTSA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel | 98000 |
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$0.2198 | Buy Now |
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DISTI #
12AC0044
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Avnet Americas | Power MOSFET, N Channel, 600 V, 120 mA, 25 ohm, SOT-223, Surface Mount - Product that comes on tape, but is not reeled (Alt: 12AC0044) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 111 Partner Stock |
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$0.5670 / $0.9110 | Buy Now |
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DISTI #
BSP125H6327XTSA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 0.12A, 1.8W, SOT223 Min Qty: 1 | 1133 |
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$0.3150 / $0.7540 | Buy Now |
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DISTI #
C1S322000320222
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Chip1Stop | Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 9440 |
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$0.2450 / $0.7770 | Buy Now |
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DISTI #
SP001058576
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EBV Elektronik | Power MOSFET, N Channel, 600 V, 120 mA, 25 ohm, SOT-223, Surface Mount (Alt: SP001058576) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days | EBV - 720000 |
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Buy Now | |
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LCSC | 600V 0.12A 1.8W 45m10V0.12A 2.3V94uA 1 N-channel SOT-223-4 MOSFETs ROHS | 54 |
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$0.3954 / $0.4179 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 576000 |
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$0.7821 / $0.8452 | Buy Now |
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Win Source Electronics | MOSFET N-CH 600V 120MA SOT-223 | 47320 |
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$0.3381 / $0.4366 | Buy Now |
Part Details for BSP125H6327XTSA1
BSP125H6327XTSA1 CAD Models
BSP125H6327XTSA1 Part Data Attributes
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BSP125H6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP125H6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.12 A | |
| Drain-source On Resistance-Max | 45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 0.48 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for BSP125H6327XTSA1
This table gives cross-reference parts and alternative options found for BSP125H6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP125H6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSP125H6433 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | BSP125H6327XTSA1 vs BSP125H6433 |
| BSP125L6433 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | BSP125H6327XTSA1 vs BSP125L6433 |
| BSP125L6433HTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | BSP125H6327XTSA1 vs BSP125L6433HTMA1 |