Datasheets
BSP135H6327XTSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Part Details for BSP135H6327XTSA1 by Infineon Technologies AG

Overview of BSP135H6327XTSA1 by Infineon Technologies AG

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Price & Stock for BSP135H6327XTSA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y1824
Newark Power Mosfet, N Channel, 120 Ma, 600 V, 25 Ohm, 10 V, -1.4 V Rohs Compliant: Yes |Infineon BSP135H6327XTSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 24752
  • 1 $1.4600
  • 10 $1.2100
  • 25 $1.1200
  • 50 $1.0400
  • 100 $0.9580
  • 250 $0.8920
  • 500 $0.8260
$0.8260 / $1.4600 Buy Now
DISTI # 86AK4502
Newark Mosfet, N-Ch, 600V, 0.12A, Sot-223 Rohs Compliant: Yes |Infineon BSP135H6327XTSA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $0.6720
  • 2,000 $0.6540
  • 4,000 $0.6410
  • 6,000 $0.6270
  • 10,000 $0.6020
$0.6020 / $0.6720 Buy Now
DISTI # BSP135H6327XTSA1TR-ND
DigiKey MOSFET N-CH 600V 120MA SOT223-4 Min Qty: 1000 Container: Reel 51000
Tape & Reel
  • 1,000 $0.5779
  • 2,000 $0.5440
  • 5,000 $0.5181
  • 10,000 $0.4942
$0.4942 / $0.5779 Buy Now
DISTI # BSP135H6327XTSA1CT-ND
DigiKey MOSFET N-CH 600V 120MA SOT223-4 Min Qty: 1 Container: Cut Tape 1498
Cut Tape
  • 1 $1.3200
  • 10 $1.0760
  • 100 $0.8369
  • 500 $0.7094
$0.7094 / $1.3200 Buy Now
DISTI # BSP135H6327XTSA1DKR-ND
DigiKey MOSFET N-CH 600V 120MA SOT223-4 Min Qty: 1 Container: Digi-Reel 0
Digi-Reel®
  • 1 $1.3200
  • 10 $1.0760
  • 100 $0.8369
  • 500 $0.7094
$0.7094 / $1.3200 Buy Now
DISTI # BSP135H6327XTSA1
Avnet Americas Power MOSFET, N Channel, 600 V, 120 mA, 45 Ohm, SOT-223, 4 Pins, Surface Mount - Tape and Reel (Alt: BSP135H6327XTSA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 6000
RFQ
DISTI # BSP135H6327XTSA1
TME Transistor: N-MOSFET, unipolar, 600V, 0.12A, 1.8W, SOT223 Min Qty: 1 972
  • 1 $1.2600
  • 10 $1.0300
  • 50 $0.8600
  • 200 $0.7200
  • 500 $0.7000
$0.7000 / $1.2600 Buy Now
Chip 1 Exchange INSTOCK 13000
RFQ
DISTI # C1S322000426049
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 2946
  • 1 $1.1800
  • 10 $0.9630
  • 50 $0.8940
  • 100 $0.7530
  • 200 $0.7110
  • 500 $0.6380
  • 1,000 $0.4500
  • 2,000 $0.4360
$0.4360 / $1.1800 Buy Now
DISTI # SP001058812
EBV Elektronik Power MOSFET, N Channel, 600 V, 120 mA, 45 Ohm, SOT-223, 4 Pins, Surface Mount (Alt: SP001058812) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 600V 120MA SOT-223 21110
  • 65 $0.8130
  • 150 $0.6670
  • 235 $0.6460
  • 320 $0.6250
  • 415 $0.6050
  • 555 $0.5420
$0.5420 / $0.8130 Buy Now

Part Details for BSP135H6327XTSA1

BSP135H6327XTSA1 CAD Models

BSP135H6327XTSA1 Part Data Attributes

BSP135H6327XTSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSP135H6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.12 A
Drain-source On Resistance-Max 45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 0.48 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for BSP135H6327XTSA1

This table gives cross-reference parts and alternative options found for BSP135H6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP135H6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP135H6906XTSA1 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP135H6327XTSA1 vs BSP135H6906XTSA1
BSP135L6906HTSA1 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP135H6327XTSA1 vs BSP135L6906HTSA1
BSP135H6906 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP135H6327XTSA1 vs BSP135H6906

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