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Transistors / Power Field-Effect Transistors / BSP149H6327XTSA1
Datasheets
BSP149H6327XTSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Part Details for BSP149H6327XTSA1 by Infineon Technologies AG

Results Overview of BSP149H6327XTSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

BSP149H6327XTSA1 Information

BSP149H6327XTSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSP149H6327XTSA1

Part # Distributor Description Stock Price Buy
DISTI # 68AC4411
Newark Mosfet, N-Ch, 200V, 0.66A, 150Deg C, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:660Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:-1.4V Rohs Compliant: Yes |Infineon BSP149H6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 68
  • 1 $0.6210
$0.6210 Buy Now
DISTI # 86AK4504
Newark Mosfet, N-Ch, 200V, 0.66A, Sot-223 Rohs Compliant: Yes |Infineon BSP149H6327XTSA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $0.7100
  • 2,000 $0.6880
  • 4,000 $0.6650
  • 6,000 $0.6430
$0.6430 / $0.7100 Buy Now
DISTI # 68AC4411
Avnet Americas Power MOSFET, N Channel, 200 V, 660 mA, 1.8 Ohm, SOT-223, 4 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 68AC4411) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 44 Partner Stock
  • 1 $1.4600
  • 10 $1.0700
  • 25 $0.9750
  • 50 $0.8780
  • 100 $0.7800
$0.7800 / $1.4600 Buy Now
DISTI # BSP149H6327XTSA1
Avnet Americas Power MOSFET, N Channel, 200 V, 660 mA, 1.8 Ohm, SOT-223, 4 Pins, Surface Mount - Tape and Reel (Alt: BSP149H6327XTSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.3332
  • 2,000 $0.3315
  • 4,000 $0.3298
  • 6,000 $0.3281
  • 8,000 $0.3264
$0.3264 / $0.3332 Buy Now
DISTI # BSP149H6327XTSA1
TME Transistor: N-MOSFET, unipolar, 200V, 0.53A, Idm: 2.6A, 1.8W, SOT223 Min Qty: 1 1858
  • 1 $1.1420
  • 10 $0.8190
  • 50 $0.7090
  • 100 $0.5740
  • 200 $0.5470
  • 250 $0.5330
  • 500 $0.4650
  • 1,000 $0.4380
  • 2,000 $0.4270
$0.4270 / $1.1420 Buy Now
DISTI # C1S322000467134
Chip One Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 2601
  • 5 $1.2200
  • 10 $0.7960
  • 50 $0.7500
  • 100 $0.5790
  • 200 $0.5520
  • 500 $0.4710
  • 1,000 $0.4700
  • 2,000 $0.4690
$0.4690 / $1.2200 Buy Now
DISTI # SP001058818
EBV Elektronik Power MOSFET, N Channel, 200 V, 660 mA, 1.8 Ohm, SOT-223, 4 Pins, Surface Mount (Alt: SP001058818) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 305000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 243000
  • 1,000 $1.1300
  • 243,000 $1.0400
$1.0400 / $1.1300 Buy Now
Win Source Electronics MOSFET N-CH 200V 660MA SOT-223 49950
  • 95 $0.5482
  • 225 $0.4499
  • 345 $0.4358
  • 475 $0.4217
  • 615 $0.4077
  • 825 $0.3655
$0.3655 / $0.5482 Buy Now

Part Details for BSP149H6327XTSA1

BSP149H6327XTSA1 CAD Models

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BSP149H6327XTSA1 Part Data Attributes

Parametric Data
BSP149H6327XTSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSP149H6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.66 A
Drain-source On Resistance-Max 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 2.6 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for BSP149H6327XTSA1

This table gives cross-reference parts and alternative options found for BSP149H6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP149H6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSP149H6906XTSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-4 BSP149H6327XTSA1 vs BSP149H6906XTSA1

BSP149H6327XTSA1 Related Parts

BSP149H6327XTSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the temperature derating curve provided in the datasheet.

  • Infineon recommends following the soldering conditions outlined in their application note AN2013-02, which includes guidelines for reflow soldering, wave soldering, and hand soldering to ensure reliable assembly.

  • To troubleshoot issues with the internal voltage regulator, check the input voltage, output voltage, and current consumption. Verify that the input voltage is within the recommended range, and the output voltage is within the specified tolerance. Also, ensure that the device is not overheating, and the current consumption is within the recommended limits.

  • To prevent electrostatic discharge (ESD) damage, handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures. Ground yourself before handling the device, and use an ESD wrist strap or mat to discharge static electricity.

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