Part Details for BSP170PH6327 by Infineon Technologies AG
Overview of BSP170PH6327 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP170PH6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1.9A I(D), 60V, 0.3OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 354 |
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$0.3486 / $0.7470 | Buy Now |
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CHIPMALL.COM LIMITED | 60V 1.9A 300m��@10V,1.9A 1.8W 4V@250uA P Channel SOT-223-4 MOSFETs ROHS | 7203 |
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$0.3295 / $0.5858 | Buy Now |
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LCSC | 60V 1.9A 300m10V1.9A 1.8W 4V250uA 1PCSPChannel SOT-223-4 MOSFETs ROHS | 7203 |
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$0.3362 / $0.5978 | Buy Now |
DISTI #
BSP170P
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Maritex | Transistor: P-MOSFET, unipolar, -60V, -1.9A, 0.3ohm, 1.8W, -55+150 deg.C, SMD, SOT223, AEC-Q100 Min Qty: 1 Package Multiple: 1 | 10 |
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$1.0680 / $1.4420 | Buy Now |
Part Details for BSP170PH6327
BSP170PH6327 CAD Models
BSP170PH6327 Part Data Attributes:
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BSP170PH6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP170PH6327
Infineon Technologies AG
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.9 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 7.6 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP170PH6327
This table gives cross-reference parts and alternative options found for BSP170PH6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP170PH6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP170PH6327XTSA1 | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP170PH6327 vs BSP170PH6327XTSA1 |
BSP171PL6327XT | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP170PH6327 vs BSP171PL6327XT |