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BSP250,115 by:

BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin

Part Details for BSP250,115 by NXP Semiconductors

Overview of BSP250,115 by NXP Semiconductors

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Applications Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Price & Stock for BSP250,115

Part # Distributor Description Stock Price Buy
NexGen Digital   1999
RFQ

Part Details for BSP250,115

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BSP250,115 Part Data Attributes

BSP250,115 NXP Semiconductors
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BSP250,115 NXP Semiconductors BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-73
Package Description PLASTIC, SMD, SC-73, 4 PIN
Pin Count 4
Manufacturer Package Code SOT223
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 5 W
Power Dissipation-Max (Abs) 1.65 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 80 ns

Alternate Parts for BSP250,115

This table gives cross-reference parts and alternative options found for BSP250,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP250,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP250/T3 Power Field-Effect Transistor Nexperia BSP250,115 vs BSP250/T3
BSP250/T3 TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250,115 vs BSP250/T3
BSP250T/R TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power NXP Semiconductors BSP250,115 vs BSP250T/R
BSP250-TAPE-7 TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250,115 vs BSP250-TAPE-7
BSP250-T TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250,115 vs BSP250-T
BSP250-T Power Field-Effect Transistor Nexperia BSP250,115 vs BSP250-T
BSP250,135 BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin Nexperia BSP250,115 vs BSP250,135
BSP250T/R Power Field-Effect Transistor Nexperia BSP250,115 vs BSP250T/R
934033450135 Power Field-Effect Transistor Nexperia BSP250,115 vs 934033450135
BSP250 Power Field-Effect Transistor Nexperia BSP250,115 vs BSP250
Part Number Description Manufacturer Compare
NDT456P Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP250,115 vs NDT456P
FDT458P_NL Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP250,115 vs FDT458P_NL
FX30ASJ-03 Power Field-Effect Transistor, 30A I(D), 30V, 0.061ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-3, 3 PIN Powerex Power Semiconductors BSP250,115 vs FX30ASJ-03
NDT452APJ23Z Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Fairchild Semiconductor Corporation BSP250,115 vs NDT452APJ23Z
FDT458P -30V P-Channel PowerTrench® MOSFET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL Fairchild Semiconductor Corporation BSP250,115 vs FDT458P
BSP250T/R TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power NXP Semiconductors BSP250,115 vs BSP250T/R
NDT452AP 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC BSP250,115 vs NDT452AP
NDT452APL84Z Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP250,115 vs NDT452APL84Z
BSP250/T3 TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250,115 vs BSP250/T3
BSP250 Power Field-Effect Transistor Nexperia BSP250,115 vs BSP250

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